NJW44H11G 80 V NPN, 10 A Power Transistor These series of plastic, silicon NPN power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters NJW44H11G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V 80 Vdc CEO (I = 30 mAdc, I = 0) C B Collector Cutoff Current I 10 Adc CES (V = Rated V , V = 0) CE CEO BE Emitter Cutoff Current I 10 Adc EBO (V = 5.0 Vdc) BE ON CHARACTERISTICS DC Current Gain h FE (I = 2 A, V = 2 V) 100 400 C CE (I = 4 A, V = 2 V) 80 320 C CE CollectorEmitter Saturation Voltage V 1.0 V CE(sat) (I = 8 A, I = 400 mA) C B BaseEmitter Turnon Voltage V 1.5 V BE(on) (I = 8 A, V = 2.0 V) C CE DYNAMIC CHARACTERISTICS Output Capacitance C 65 pF obo (V = 10 V, f = 1.0 MHz) CB Cutoff Frequency f 85 MHz T (I = 500 mA, V = 5 V, f = 1.0 MHz) C CE SWITCHING TIMES Delay and Rise Times t + t 300 ns d r (I = 5.0 Adc, I = 0.5 A) C B1 Storage Time t 500 ns s (I = 5.0 Adc, I = I = 0.5 A) C B1 B2 Fall Time t 140 ns f (I = 5.0 Adc, I = I = 0.5 A) C B1 B2