NL17SG373 Low-Power D-Type Transparent Latch with 3-State Output The NL17SG373 MiniGate is an advanced highspeed CMOS DType Transparent Latch with 3State Output in ultrasmall www.onsemi.com footprint. The NL17SG373 input structures provide protection when voltages MARKING up to 5.5 V are applied, regardless of the supply voltage. DIAGRAMS This device is fully specified for partial powerdown applications 6 using I . The I circuitry disables the output, preventing the OFF OFF damaging backflow current through the device when it is powered SC88 1 AG M DF SUFFIX down. CASE 419B Features 1 Wide Operating V Range: 0.9 V to 3.6 V CC AG = Device Code High Speed: t = 2.4 ns (Typ) V = 3.0 V, C = 15 pF PD CC L M = Date Code* Low Power Dissipation: I = 0.5 A (Max) at T = 25C = PbFree Package CC A 5.5 V Overvoltage Tolerant (OVT) Input Pins (Note: Microdot may be in either location) UltraSmall Packages *Date Code orientation and/or position may vary depending upon manufacturing location. These Devices are PbFree and are RoHS Compliant PIN ASSIGNMENT Pin Function 1 LE 2 GND 3D Figure 1. SC88 (Top View) 4 Q 5V CC 6 OE ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. Figure 2. Logic Symbol Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: May, 2018 Rev. 2 NL17SG373/DNL17SG373 FUNCTION TABLE Input Output OE LE D Q Internal Latch Operating Mode L H L L L Enable and Read Register L H H H H (Transparent Mode) L L X L L Latch and Read Register L L X H H H X X X Z Latch Register and Disable Output MAXIMUM RATINGS Symbol Parameter Value Unit V DC Supply Voltage 0.5 to +5.5 V CC V DC Input Voltage 0.5 to +5.5 V IN V DC Output Voltage 0.5 to V + 0.5 V OUT CC I DC Input Diode Current V < GND 50 mA IK IN I DC Output Diode Current V < GND, V > V 50 mA OK OUT OUT CC I DC Output Source/Sink Current 20 mA O I DC Supply Current Per Supply Pin 50 mA CC I DC Ground Current per Ground Pin 50 mA GND T Storage Temperature Range 65 to +150 C STG T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L T Junction Temperature Under Bias 150 C J MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 0.125 in R V ESD Withstand Voltage Human Body Mode (Note 2) > 3000 V ESD Machine Model (Note 3) > 200 I Latchup Performance Above V and Below GND at 125C (Note 4) 100 mA LATCHUP CC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2 ounce copper trace no air flow. 2. Tested to EIA / JESD22A114A. 3. Tested to EIA / JESD22A115A. 4. Tested to EIA / JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V Positive DC Supply Voltage 0.9 3.6 V CC V Digital Input Voltage 0 3.6 V IN V Output Voltage Active Mode 0 V V OUT CC T Operating FreeAir Temperature 55 +125 C A t / V Input Transition Rise or Fail Rate V = 3.3 V 0.3 V 0 10 nS/V CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2