NL17SH08P5T5G ON Semiconductor

NL17SH08 Single 2-Input AND Gate The NL17SH08 is an advanced high speed CMOS 2input AND gate fabricated with silicon gate CMOS technology. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The NL17SH08 input structure provides protection when voltages NL17SH08 MAXIMUM RATINGS Symbol Parameter Value Unit V DC Supply Voltage 0.5 to +7.0 V CC V DC Input Voltage 0.5 to +7.0 V IN V DC Output Voltage 0.5 to V +0.5 V OUT CC I DC Input Diode Current 20 mA IK I DC Output Diode Current 20 mA OK I DC Output Sink Current 25 mA OUT I DC Supply Current per Supply Pin 50 mA CC T Storage Temperature Range 65 to +150 C STG T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L T Junction Temperature Under Bias +150 C J P Power Dissipation in Still Air 50 mW D MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 0.125 in R I Latchup Performance Above V and Below GND at 125C (Note 1) 100 mA LATCHUP CC Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit V DC Supply Voltage 2.0 5.5 V CC V DC Input Voltage 0.0 5.5 V IN V DC Output Voltage 0.0 V V OUT CC T Operating Temperature Range 55 +125 C A t , t Input Rise and Fall Time V = 3.3 V 0.3 V 0 100 ns/V r f CC V = 5.0 V 0.5 V 0 20 CC FAILURE RATE OF PLASTIC = CERAMIC Device Junction Temperature versus UNTIL INTERMETALLICS OCCUR Time to 0.1% Bond Failures Junction Temperature C Time, Hours Time, Years 80 1,032,200 117.8 1 90 419,300 47.9 100 178,700 20.4 1 10 100 1000 110 79,600 9.4 TIME, YEARS 120 37,000 4.2 Figure 3. Failure Rate vs. Time 130 17,800 2.0 Junction Temperature 140 8,900 1.0