NLU1GT04AMUTCG ON Semiconductor

N NLU1GT04 Single Inverter, TTL Level LSTTLCompatible Inputs The NLU1GT04 MiniGate is an advanced CMOS highspeed inverting buffer in ultrasmall footprint. The device input is compatible with TTLtype input thresholds and the output has a full 5.0 V CMOS level output swing. www.onsemi.com The NLU1GT04 input and output structures provide protection when voltages up to 7 V are applied, regardless of the supply voltage. MARKING DIAGRAMS Features UDFN6 High Speed: t = 3.8 ns (Typ) V = 5.0 V PD CC MU SUFFIX M Low Power Dissipation: I = 1 A (Max) at T = 25C CC A CASE 517AA 1 TTLCompatible Input: V = 0.8 V V = 2.0 V IL IH CMOSCompatible Output: V > 0.8 V V < 0.1 V Load UDFN6 OH CC OL CC MU SUFFIX PM Power Down Protection Provided on inputs CASE 517AQ Balanced Propagation Delays 1 UltraSmall Packages N or P = Device Marking These Devices are PbFree, Halogen Free/BFR Free and are RoHS M = Date Code Compliant PIN ASSIGNMENT 1 NC NC 1 6 V CC 2 IN A 3 GND 4 OUT Y IN A 2 5 NC 5NC 6V CC GND 3 4 OUT Y FUNCTION TABLE AY L H Figure 1. Pinout (Top View) H L 1 IN A OUT Y ORDERING INFORMATION Figure 2. Logic Symbol See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2016 Rev. 3 NLU1GT04/DNLU1GT04 MAXIMUM RATINGS Symbol Parameter Value Unit V DC Supply Voltage 0.5 to +7.0 V CC V DC Input Voltage 0.5 to +7.0 V IN V DC Output Voltage 0.5 to +7.0 V OUT I DC Input Diode Current V < GND 20 mA IK IN I DC Output Diode Current V < GND 20 mA OK OUT I DC Output Source/Sink Current 12.5 mA O I DC Supply Current Per Supply Pin 25 mA CC I DC Ground Current per Ground Pin 25 mA GND T Storage Temperature Range 65 to +150 C STG T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L T Junction Temperature Under Bias 150 C J MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 28 to 34 UL 94 V0 0.125 in R V ESD Withstand Voltage Human Body Model (Note 2) > 2000 V ESD Machine Model (Note 3) > 200 Charged Device Model (Note 4) N/A I Latchup Performance Above V and Below GND at 125 C (Note 5) 500 mA LATCHUP CC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Measured with minimum pad spacing on an FR4 board, using 10 mmby1 inch, 2 ounce copper trace no air flow. 2. Tested to EIA / JESD22A114A. 3. Tested to EIA / JESD22A115A. 4. Tested to JESD22C101A. 5. Tested to EIA / JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V Positive DC Supply Voltage 1.65 5.5 V CC V Digital Input Voltage 0 5.5 V IN V Output Voltage 0 5.5 V OUT T Operating FreeAir Temperature 55 +125 C A t/ V Input Transition Rise or Fall Rate V = 3.3 V 0.3 V 0 100 ns/V CC V = 5.0 V 0.5 V 0 20 CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 2