NRVBM110ET1G ON Semiconductor

MBRM110ET1G, NRVBM110ET1G Schottky Power Rectifier, Surface Mount, 1.0 A, 10 V The Schottky POWERMITE employs the Schottky Barrier MBRM110ET1G, NRVBM110ET1G MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 10 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A O (T = 100C) 1.0 L NonRepetitive Peak Surge Current I A FSM (NonRepetitive peak surge current, halfwave, single phase, 60 Hz) 50 Storage Temperature T 55 to +150 C stg Operating Junction Temperature T 55 to +150 C J Voltage Rate of Change dv/dt V/ s (Rated V , T = 25C) 10,000 R J Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction toLead (Anode) (Note 1) R 35 C/W tjl Thermal Resistance, JunctiontoTab (Cathode) (Note 1) R 23 tjtab Thermal Resistance, JunctiontoAmbient (Note 1) R 277 tja 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 8 and 9. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) V T = 25C T = 100C V F J J (I = 0.1 A) V 0.455 0.360 V F F (I = 1.0 A) 0.530 0.455 F (I = 2.0 A) 0.595 0.540 F Maximum Instantaneous Reverse Current (Note 2) I T = 25C T = 100C A R J J (V = 5.0 V) 0.5 300 R (V = 10 V) 1.0 500 R 2. Pulse Test: Pulse Width 250 s, Duty Cycle 2%. 10 10 T = 150C J T = 150C J T = 25C T = 100C J J T = 100C T = -40C J J 1.0 1.0 T = 25C J 0.1 0.1 0.2 0.4 0.6 0.8 0.2 0.4 0.6 0.8 v , INSTANTANEOUS FORWARD VOLTAGE (VOLTS) V , MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) F F Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage