NS2029M3 PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT723 package which is designed for low power surface mount applications, where board www.onsemi.com space is at a premium. Features PNP GENERAL Reduces Board Space PURPOSE AMPLIFIER High h , 210460 (Typical) FE TRANSISTORS Low V , < 0.5 V CE(sat) SURFACE MOUNT ESD Performance: Human Body Model 2000 V, Machine Model 200 V Available in 8000 Unit Tape & Reel with 2 mm Pitch COLLECTOR 3 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 1 2 BASE EMITTER MAXIMUM RATINGS (T = 25C) A Rating Symbol Value Unit MARKING CollectorBase Voltage V 60 Vdc (BR)CBO DIAGRAM CollectorEmitter Voltage V 50 Vdc (BR)CEO 3 EmitterBase Voltage V 6.0 Vdc (BR)EBO 9F M SOT723 CASE 631AA Collector Current Continuous I 150 mAdc C 2 THERMAL CHARACTERISTICS 1 Rating Symbol Max Unit 9F = Specific Device Code M = Date Code* Power Dissipation (Note 1) P 265 mW D *Date Code orientation and/or position may Junction Temperature T 150 C J vary depending upon manufacturing location. Storage Temperature Range T 55 ~ +150 C stg Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be ORDERING INFORMATION assumed, damage may occur and reliability may be affected. Device Package Shipping 1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint. NS2029M3T5G SOT723 8000/Tape & Reel (PbFree) NSV2029M3T5G SOT723 8000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: October, 2015 Rev. 5 NS2029M3/DNS2029M3 ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Min Typ Max Unit CollectorBase Breakdown Voltage (I = 50 Adc, I = 0) V 60 Vdc C E (BR)CBO CollectorEmitter Breakdown Voltage (I = 1.0 mAdc, I = 0) V 50 Vdc C B (BR)CEO EmitterBase Breakdown Voltage (I = 50 Adc, I = 0) V 6.0 Vdc E E (BR)EBO CollectorBase Cutoff Current (V = 30 Vdc, I = 0) I 0.5 nA CB E CBO EmitterBase Cutoff Current (V = 7.0 Vdc, I = 0) I 0.1 A EB B EBO CollectorEmitter Saturation Voltage (Note 2) V Vdc CE(sat) (I = 50 mAdc, I = 5.0 mAdc) 0.5 C B DC Current Gain (Note 2) h FE (V = 6.0 Vdc, I = 1.0 mAdc) 120 560 CE C Transition Frequency f MHz T (V = 12 Vdc, I = 2.0 mAdc, f = 30 MHz) 140 CE C Output Capacitance (V = 12 Vdc, I = 0 Adc, f = 1.0 MHz) C 3.5 pF CB E OB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. www.onsemi.com 2