NSL12AWT1G High Current Surface Mount PNP Silicon Low V CE(sat) Transistor for Battery Operated Applications NSL12AWT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, (I = 10 mAdc, I = 0) V 12 15 Vdc C B (BR)CEO Collector Base Breakdown Voltage, (I = 0.1 mAdc, I = 0) V 12 25 Vdc C E (BR)CBO Emitter Base Breakdown Voltage, (I = 0.1 mAdc, I = 0) V 5.0 7.0 Vdc E C (BR)EBO Collector Cutoff Current, (V = 12 Vdc, I = 0) I 0.02 0.1 Adc CB E CBO CollectorEmitter Cutoff Current, (V = 12 Vdc, I = 0) I 0.03 0.1 Adc CES E CES Emitter Cutoff Current, (V = 5.0 Vdc, I = 0) I 0.03 0.1 Adc CES E EBO ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 0.5 A, V = 1.5 V) 100 180 C CE (I = 0.8 A, V = 1.5 V) 100 165 300 C CE (I = 1.0 A, V = 1.5 V) 100 160 C CE Collector Emitter Saturation Voltage (Note 3) V V CE(sat) (I = 0.5 A, I = 10 mA) 0.10 0.160 C B (I = 0.8 A, I = 16 mA) 0.14 0.235 C B (I = 1.0 A, I = 20 mA) 0.17 0.290 C B Base Emitter Saturation Voltage (Note 3) V V BE(sat) (I = 1.0 A, I = 20 mA) 0.84 0.95 C B Base Emitter Turnon Voltage (Note 3) V V BE(on) (I = 1.0 A, V = 1.5 V) 0.81 0.95 C CE Cutoff Frequency f MHz T (I = 100 mA, V = 5.0 V, f = 100 MHz) 100 C CE Output Capacitance C pF obo (V = 1.5 V, f = 1.0 MHz) 50 65 CB 3. Pulsed Condition: Pulse Width < 300 sec, Duty Cycle < 2% ORDERING INFORMATION Device Package Shipping NSL12AWT1G SOT363 3000 Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 0.5 0.5 0.4 0.4 2 A 0.3 0.3 0.2 0.2 1 A I /I = 100 C B 800 mA 0.1 0.1 I = 100 mA 500 mA C I /I = 10 C B 0 0 1 10 100 0.001 0.01 0.1 1 I , BASE CURRENT (mA) I , COLLECTOR CURRENT (AMPS) B C Figure 1. Collector Emitter Voltage vs Base Current Figure 2. Collector Emitter Voltage vs Collector Current