NSM3005NZ Small Signal BJT and MOSFET 30 V, 500 mA, PNP BJT with 20 V, 224 mA, NChannel MOSFET www.onsemi.com Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM Typical Applications 1 UDFN6 6 Portable Devices AE M CASE 517AT COOL 1 Q1 MAXIMUM RATINGS (T = 25C unless otherwise specified) J AE = Specific Device Code Parameter Symbol Value Unit M = Date Code CollectorEmitter Voltage V 30 V CEO = PbFree Package CollectorBase Voltage V 40 V (Note: Microdot may be in either location) CBO *Date Code orientation may vary depending EmitterBase Voltage V 5.0 V EBO upon manufacturing location. Collector Current I 500 mA C Base Current I 50 mA B PIN CONNECTIONS Q2 MAXIMUM RATINGS (T = 25C unless otherwise specified) J Parameter Symbol Value Unit DraintoSource Voltage V 20 V DSS GatetoSource Voltage V 8 V GS Continuous Drain Steady T = 25C I 224 mA A D Current (Note 1) State T = 85C 162 A t 5 s T = 25C 241 A Pulsed Drain Current T = 10 s I 673 mA DM p Source Current (Body Diode) I 120 mA S Pin 6 Pin 1 BJT BJT THERMAL CHARACTERISTICS BJT Collector Emitter Collector Parameter Symbol Value Unit Pin 5 Pin 2 Thermal Resistance MOSFET BJT JunctiontoAmbient (Note 1) R 245 C/W JA Gate Base Total Power Dissipation T = 25C P 0.8 W A D MOSFET Pin 3 Pin 4 Operating Junction and Storage T , T 55 to C J STG Drain MOSFET MOSFET Temperature 150 Drain Source Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Bottom View Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. Surface mounted on FR4 board using 1 in sq pad size (Cu. area = 1.127 in sq 1 oz including traces). Device Package Shipping NSM3005NZTAG UDFN6 3000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: October, 2018 Rev. 3 NSM3005NZ/DNSM3005NZ Q1 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS CollectorBase Breakdown Voltage V I = 100 A 40 V (BR)CBO C CollectorEmitter Breakdown Voltage V I = 10 mA 30 V (BR)CEO C EmitterBase Breakdown Voltage V I = 100 A 5.0 V (BR)EBO E Collector Cutoff Current I V = 25 V, I = 0 A 1.0 A CBO CB E Emitter Cutoff Current I V = 5.0 V, I = 0 A 10 A EBO EB C ON CHARACTERISTICS (Note 2) DC Current Gain h V = 3.0 V, I = 30 mA 20 100 FE CE C V = 3.0 V, I = 100 mA 20 100 CE C V = 3.0 V, I = 500 mA 20 100 CE C CollectorEmitter Saturation Voltage V I = 500 mA, I = 50 mA 0.4 V CE(sat) C B BaseEmitter Saturation Voltage V I = 500 mA, I = 50 mA 1.1 V BE(sat) C B BaseEmitter TurnOn Voltage V V = 1.0 V, I = 500 mA 1.0 V BE(on) CE C Q2 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T I = 250 A, ref to 25C 19 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Votlage Drain Current I V = 0 V, V = 16 V, T = 25C 1.0 A DSS GS DS J GatetoSource Leakage Current I V = 0 V, V = 8.0 V 2.0 A GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 1.9 mV/C GS(TH) J DraintoSource On Resistance R V = 4.5 V, I = 100 mA 0.65 1.4 DS(ON) GS D V = 2.5 V, I = 50 mA 0.9 1.9 GS D V = 1.8 V, I = 20 mA 1.1 2.2 GS D V = 1.5 V, I = 10 mA 1.4 4.3 GS D Forward Transconductance g V = 5.0 V, I = 100 mA 0.56 S FS DS D CHARGES AND CAPACITANCES f = 1.0 MHz, V = 0 V, pF Input Capacitance C 15.8 ISS GS V = 15 V DS Output Capacitance C 3.5 OSS Reverse Transfer Capacitance C 2.4 RSS Total Gate Charge Q V = 4.5 V, V = 15 V 0.70 nC GS DS G(TOT) I = 200 mA D Threshold Gate Charge Q 0.05 G(TH) GatetoSource Charge Q 0.14 GS GatetoDrain Charge Q 0.10 GD SWITCHING CHARACTERISTICS, V = 4.5 V (Note 3) GS TurnOn Delay Time t V = 4.5 V, V = 15 V, 18 ns d(ON) GS DD I = 200 mA, R = 2 D G Rise Time t 35 r TurnOff Delay Time T 201 d(ON) Fall Time t 110 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, I = 10 mA 0.55 1.0 V SD GS S 2. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2