NSM4002MR6 Dual NPN Transistors for Driving LEDs NSM4002MR6 contains a single two NPN transistors. The base of the Q2 NPN transistor is internally connected to the collector of the Q1 NPN transistor. This device is designed to replace a discrete solution that is common for providing a constant current by integrating these two components into a single device. NSM4002MR6 is housed in a www.onsemi.com SC74 package which is ideal for surface mount applications in space constrained applications. Dual NPN Transistors Features for Driving LEDs Simplifies Circuit Design Reduces Board Space Reduces Component Count 65 4 6, 5 4 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Q2 Q2 Typical Applications Q1 Q1 LED Lighting Driver Circuits 12 3 1 23 MAXIMUM RATINGS Q (T = 25C) A 1 Rating Symbol Value Unit CollectorEmitter Voltage V 40 Vdc CEO 4 5 6 CollectorBase Voltage V 60 Vdc CBO SC74 CASE 318F EmitterBase Voltage V 6.0 Vdc 3 EBO 2 1 Collector Current Continuous I 200 mAdc C MAXIMUM RATINGS Q (T = 25C) 2 A Rating Symbol Value Unit MARKING DIAGRAM CollectorEmitter Voltage V 45 Vdc CEO CollectorBase Voltage V 50 Vdc CBO 1AM M EmitterBase Voltage V 5.0 Vdc EBO Collector Current Continuous I 500 mAdc C Stresses exceeding those listed in the Maximum Ratings table may damage the 1AM = Device Code device. If any of these limits are exceeded, device functionality should not be M = Date Code* assumed, damage may occur and reliability may be affected. = PbFree Package THERMAL CHARACTERISTICS (Note: Microdot may be in either location) Rating Symbol Max Unit *Date Code orientation may vary depending Total Device Dissipation P D upon manufacturing location. T = 25C (Note 1) 260 mW A Derate above 25C 2.08 mW/C ORDERING INFORMATION Thermal Resistance, R 480 C/W JA JunctiontoAmbient (Note 1) Device Package Shipping Total Device Dissipation P D T = 25C (Note 2) 300 mW NSM4002MR6T1G SC74 3000 / A Derate above 25C 2.4 mW/C (PbFree) Tape & Reel For information on tape and reel specifications, Thermal Resistance, R 416 C/W JA including part orientation and tape sizes, please JunctiontoAmbient (Note 2) refer to our Tape and Reel Packaging Specification Junction and Storage T , T 55 to +150 C Brochure, BRD8011/D. J stg Temperature Range 2 1. FR4, 100 mm , 2 oz. Cu. 2 2. FR4, 500 mm , 2 oz. Cu. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2015 Rev. 1 NSM4002MR6/DNSM4002MR6 Table 1. ELECTRICAL CHARACTERISTICS Q (T = 25C, unless otherwise noted) 1 A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I = 1.0 mAdc, I = 0) V 40 Vdc C B (BR)CEO CollectorBase Breakdown Voltage (I = 10 Adc, I = 0) V 60 Vdc C E (BR)CBO EmitterBase Breakdown Voltage (I = 10 Adc, I = 0) V 6.0 Vdc (BR)EBO E C Collector Cutoff Current (V = 30 Vdc, V = 3.0 Vdc) I 50 nAdc CE EB(OFF) CEX Base Cutoff Current (V = 30 Vdc, V = 3.0 Vdc) I 50 nAdc CE EB(OFF) BL ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 100 A, V = 1.0 V) 40 C CE (I = 1.0 mA, V = 1.0 V) 70 C CE (I = 10 mA, V = 1.0 V) 100 300 C CE (I = 50 mA, V = 1.0 V) 60 C CE 30 (I = 100 mA, V = 1.0 V) C CE CollectorEmitter Saturation Voltage (Note 3) V V CE(sat) (I = 10 mA, I = 1.0 mA) 0.20 C B (I = 50 mA, I = 5.0 mA) 0.30 C B BaseEmitter Saturation Voltage (Note 3) V V BE(sat) (I = 10 mA, I = 1.0 mA) 0.65 0.85 C B (I = 50 mA, I = 5.0 mA) 0.95 C B Cutoff Frequency (I = 10 mA, V = 20 V, f = 100 MHz) f 300 MHz C CE T Output Capacitance (V = 5.0 V, f = 1.0 MHz) C 4.0 pF CB obo Input Capacitance (V = 0.5 V, f = 1.0 MHz) C 8.0 pF EB obo Table 2. ELECTRICAL CHARACTERISTICS Q (T = 25C, unless otherwise noted) 2 A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I = 10 mAdc, I = 0) V 45 Vdc C B (BR)CEO CollectorBase Breakdown Voltage (I = 10 Adc, I = 0) V 50 Vdc C E (BR)CBO EmitterBase Breakdown Voltage (I = 1.0 Adc, I = 0) V 5.0 Vdc E C (BR)EBO Collector Cutoff Current (V = 20 Vdc, I = 0) I 0.1 Adc CB E CBO ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 100 mA, V = 1.0 V) 250 600 C CE (I = 500 mA, V = 1.0 V) 40 C CE Collector Emitter Saturation Voltage (Note 3) V V CE(sat) (I = 500 mA, I = 50 mA) 0.7 C B Base Emitter Turnon Voltage (Note 3) V V BE(on) (I = 500 mA, V = 1.0 V) 1.2 C CE Cutoff Frequency (I = 10 mA, V = 5.0 V, f = 100 MHz f 100 MHz C CE T Output Capacitance (V = 10 V, f = 1.0 MHz C 10 pF CB obo Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. www.onsemi.com 2