NSM6056MT1G NPN Transistor with Zener Diode Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS NSM6056MT1G NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 3) (I = 1.0 mAdc, I = 0) V 40 Vdc C B (BR)CEO Collector Base Breakdown Voltage (I = 0.1 mAdc, I = 0) V 60 Vdc C E (BR)CBO Emitter Base Breakdown Voltage (I = 0.1 mAdc, I = 0) V 6.0 Vdc E C (BR)EBO Base Cutoff Current (V = 35 Vdc, V = 0.4 Vdc) I 0.1 Adc CE EB BEV Collector Cutoff Current (V = 35 Vdc, V = 0.4 Vdc) I 0.1 Adc CE EB CEX ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 0.1 mAdc, V = 1.0 Vdc) 20 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 40 C CE (I = 10 mAdc, V = 1.0 Vdc) 80 C CE (I = 150 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 500 mAdc, V = 2.0 Vdc) 40 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 150 mAdc, I = 15 mAdc) 0.4 C B (I = 500 mAdc, I = 50 mAdc) 0.75 C B Base Emitter Saturation Voltage V Vdc BE(sat) (I = 150 mAdc, I = 15 mAdc) 0.75 0.95 C B (I = 500 mAdc, I = 50 mAdc) 1.2 C B SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product (I = 20 mAdc, V = 10 Vdc, f = 100 MHz) f 250 MHz C CE T CollectorBase Capacitance (V = 5.0 Vdc, I = 0, f = 1.0 MHz) C 6.5 pF CB E cb EmitterBase Capacitance (V = 0.5 Vdc, I = 0, f = 1.0 MHz) C 30 pF EB C eb Input Impedance (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 1.0 15 k C CE ie 4 Voltage Feedback Ratio (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 0.1 8.0 X 10 C CE re Small Signal Current Gain (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 40 500 C CE fe Output Admittance (I = 1.0 mAdc, V = 10 Vdc, f = 1.0 kHz) h 1.0 30 mhos C CE oe SWITCHING CHARACTERISTICS Delay Time t 15 d (V = 30 Vdc, V = 2.0 Vdc, CC EB ns I = 150 mAdc, I = 15 mAdc) C B1 Rise Time t 20 r Storage Time t 225 s (V = 30 Vdc, I = 150 mAdc, CC C ns I = I = 15 mAdc) B1 B2 Fall Time t 30 f 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. ZENER DIODE ELECTRICAL CHARACTERISTICS (V = 0.9 Max I = 10 mA for all types) F F Z ZT Max d /dt (mV/k) VZ I = IZT Z I ZK Z Z Zener Voltage VZ IR VR I = 5 mA ZT1 Test = 0.5 10% C pF Max Current mA Mod V = 0 R Device Izt mA Min Max Max Max A V Min Max f = 1 MHz NSM6056MT1G 5.0 5.49 5.73 200 40 1.0 2.0 2.0 2.5 200