NSM80101MT1G NPN Transistor with Dual Series Switching Diode Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Typical Applications NSM80101MT1G Q1: NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 3) V V (BR)CEO (I = 1.0 mA, I = 0) 80 C B Emitter Base Breakdown Voltage V V (BR)EBO (I = 100 A, I = 0) 6.0 E C Collector Cutoff Current I A CES (V = 60 V, I = 0) 0.1 CE B Collector Cutoff Current I A CBO (V = 80 V, I = 0) 0.1 CB E ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 10 mA, V = 1.0 V) 120 C CE Collector Emitter Saturation Voltage V V CE(sat) (I = 100 mA, I = 10 mA) 0.3 C B Base Emitter Saturation Voltage V V BE(sat) (I = 10 mA, V = 5.0 Vdc) 1.2 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 10 mA, V = 5.0 V, f = 100 MHz) 150 C CE 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. D1, D2: SWITCHING DIODE (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V 75 V (BR) Reverse Voltage Leakage Current I A R (V = 75 V) 1.0 R (V = 20 V, T = 150C) 30 R J (V = 75 V, T = 150C) 100 R J Diode Capacitance C pF D (V = 0 V, f = 1.0 MHz) 2.0 R Forward Voltage V mV F (I = 1.0 mA) 715 F (I = 10 mA) 855 F (I = 50 mA) 1000 F (I = 150 mA) 1250 F Reverse Recovery Time t ns rr 6.0 (I = I = 10 mA, i = 1.0 mA, R = 100 ) F R R(REC) L Forward Recovery Voltage V V FR (I = 10 mA, t = 20 ns) 1.75 F r Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.