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X-On Electronics has gained recognition as a prominent supplier of NSM80101MT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NSM80101MT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NSM80101MT1G ON Semiconductor

NSM80101MT1G electronic component of ON Semiconductor
NSM80101MT1G ON Semiconductor
NSM80101MT1G Bipolar Transistors - BJT
NSM80101MT1G  Semiconductors

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See Product Specifications
Part No. NSM80101MT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: ON Semiconductor Bipolar Transistors - BJT NPN TRANS & SWCH DIODE
Datasheet: NSM80101MT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5287 ea
Line Total: USD 0.53 
Availability - 5181
Ship by Mon. 24 Feb to Wed. 26 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5181
Ship by Mon. 24 Feb to Wed. 26 Feb
MOQ : 1
Multiples : 1
1 : USD 0.5287
10 : USD 0.3312
100 : USD 0.1644
1000 : USD 0.1463
3000 : USD 0.1166
9000 : USD 0.099
24000 : USD 0.0957

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Series
Packaging
Brand
Factory Pack Quantity :
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NSM80101MT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSM80101MT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NSM80101MT1G NPN Transistor with Dual Series Switching Diode Features These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Typical Applications NSM80101MT1G Q1: NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 3) V V (BR)CEO (I = 1.0 mA, I = 0) 80 C B Emitter Base Breakdown Voltage V V (BR)EBO (I = 100 A, I = 0) 6.0 E C Collector Cutoff Current I A CES (V = 60 V, I = 0) 0.1 CE B Collector Cutoff Current I A CBO (V = 80 V, I = 0) 0.1 CB E ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 10 mA, V = 1.0 V) 120 C CE Collector Emitter Saturation Voltage V V CE(sat) (I = 100 mA, I = 10 mA) 0.3 C B Base Emitter Saturation Voltage V V BE(sat) (I = 10 mA, V = 5.0 Vdc) 1.2 C CE SMALLSIGNAL CHARACTERISTICS Current Gain Bandwidth Product f MHz T (I = 10 mA, V = 5.0 V, f = 100 MHz) 150 C CE 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. D1, D2: SWITCHING DIODE (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V 75 V (BR) Reverse Voltage Leakage Current I A R (V = 75 V) 1.0 R (V = 20 V, T = 150C) 30 R J (V = 75 V, T = 150C) 100 R J Diode Capacitance C pF D (V = 0 V, f = 1.0 MHz) 2.0 R Forward Voltage V mV F (I = 1.0 mA) 715 F (I = 10 mA) 855 F (I = 50 mA) 1000 F (I = 150 mA) 1250 F Reverse Recovery Time t ns rr 6.0 (I = I = 10 mA, i = 1.0 mA, R = 100 ) F R R(REC) L Forward Recovery Voltage V V FR (I = 10 mA, t = 20 ns) 1.75 F r Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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