NSS12601CF8T1G 12 V, 8.0 A, Low V CE(sat) NPN Transistor 2 ON Semiconductor s e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) are designed for use in low voltage, high speed switching applications NSS12601CF8T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typical Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, I = 0) 12 - - C B Collector - Base Breakdown Voltage V Vdc (BR)CBO (I = 0.1 mAdc, I = 0) 12 - - C E Emitter - Base Breakdown Voltage V Vdc (BR)EBO (I = 0.1 mAdc, I = 0) 6.0 - - E C Collector Cutoff Current I Adc CBO (V = 12 Vdc, I = 0) - - 0.1 CB E Emitter Cutoff Current I Adc EBO (V = 6.0 Vdc) - - 0.1 EB ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 10 mA, V = 2.0 V) 200 - - C CE (I = 500 mA, V = 2.0 V) 200 - - C CE (I = 1.0 A, V = 2.0 V) 200 395 - C CE (I = 2.0 A, V = 2.0 V) 200 - - C CE (I = 3.0 A, V = 2.0 V) 200 - - C CE Collector - Emitter Saturation Voltage (Note 3) V V CE(sat) (I = 0.1 A, I = 0.010 A) - 0.007 0.010 C B (I = 1.0 A, I = 0.100 A) - 0.030 0.050 C B (I = 1.0 A, I = 0.010 A) - 0.045 0.060 C B (I = 2.0 A, I = 0.020 A) - 0.055 0.070 C B (I = 3.0 A, I = 0.030 A) - 0.080 0.110 C B (I = 4.0 A, I = 0.400 A) - 0.090 0.120 C B Base - Emitter Saturation Voltage (Note 3) V V BE(sat) (I = 1.0 A, I = 0.01 A) - 0.760 0.900 C B Base - Emitter Turn-on Voltage (Note 3) V V BE(on) (I = 1.0 A, V = 2.0 V) - 0.720 0.900 C CE Cutoff Frequency f MHz T (I = 100 mA, V = 5.0 V, f = 100 MHz) 140 - - C CE Input Capacitance (V = 0.5 V, f = 1.0 MHz) Cibo - - 1000 pF EB Output Capacitance (V = 3.0 V, f = 1.0 MHz) Cobo - - 200 pF CB SWITCHING CHARACTERISTICS Delay (V = 10 V, I = 750 mA, I = 15 mA) t - - 110 ns CC C B1 d Rise (V = 10 V, I = 750 mA, I = 15 mA) t - - 140 ns CC C B1 r Storage (V = 10 V, I = 750 mA, I = 15 mA) t - - 550 ns CC C B1 s Fall (V = 10 V, I = 750 mA, I = 15 mA) t - - 140 ns CC C B1 f 3. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle 2%. TYPICAL CHARACTERISTICS