NSS30101LT1G Low V Transistor, CE(sat) NPN, 30 V, 2.0 A, SOT-23 Package 2 www.onsemi.com ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low 30 VOLTS saturation voltage (V ) and high current gain capability. These CE(sat) 2.0 AMPS are designed for use in low voltage, high speed switching applications NPN LOW V TRANSISTOR where affordable efficient energy control is important. CE(sat) Typical application are DCDC converters and power management EQUIVALENT R 100 m DS(on) in portable and battery powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras and MP3 players. COLLECTOR 3 Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument 1 2 BASE cluster. The high current gain allows e PowerEdge devices to be driven directly from PMUs control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. 2 EMITTER These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 3 MAXIMUM RATINGS (T = 25C) A 1 Rating Symbol Max Unit 2 Collector-Emitter Voltage V 30 Vdc CEO SOT23 (TO236) CASE 318 Collector-Base Voltage V 50 Vdc CBO STYLE 6 Emitter-Base Voltage V 5.0 Vdc EBO Collector Current Continuous I 1.0 A C MARKING DIAGRAM Collector Current Peak I 2.0 A CM THERMAL CHARACTERISTICS VS6M Characteristic Symbol Max Unit 1 Total Device Dissipation P (Note 1) 310 mW D T = 25C A VS6 = Specific Device Code Derate above 25C 2.5 mW/C M = Date Code* = PbFree Package Thermal Resistance, R (Note 1) 403 C/W JA (Note: Microdot may be in either location) Junction to Ambient *Date Code orientation and/or overbar may Total Device Dissipation P (Note 2) 710 mW D vary depending upon manufacturing location. T = 25C A Derate above 25C 5.7 mW/C Thermal Resistance, R (Note 2) 176 C/W JA ORDERING INFORMATION Junction to Ambient Device Package Shipping Total Device Dissipation P 575 mW Dsingle (Single Pulse < 10 sec.) NSS30101LT1G SOT23 3000/Tape & Reel Junction and Storage T , T 55 to C (PbFree) J stg Temperature Range +150 For information on tape and reel specifications, Stresses exceeding those listed in the Maximum Ratings table may damage the including part orientation and tape sizes, please device. If any of these limits are exceeded, device functionality should not be refer to our Tape and Reel Packaging Specification assumed, damage may occur and reliability may be affected. Brochure, BRD8011/D. 1. FR4 Minimum Pad. 2. FR4 1.0 X 1.0 inch Pad. Semiconductor Components Industries, LLC, 2005 1 Publication Order Number: October, 2016 Rev. 2 NSS30101L/DNSS30101LT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, I = 0) 30 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 0.1 mAdc, I = 0) 50 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 0.1 mAdc, I = 0) 5.0 E C Collector Cutoff Current I Adc CBO (V = 30 Vdc, I = 0) 0.1 CB E CollectorEmitter Cutoff Current I Adc CES (V = 30 Vdc) 0.1 CES Emitter Cutoff Current I Adc EBO (V = 4.0 Vdc) 0.1 EB ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 50 mA, V = 5.0 V) 300 C CE (I = 0.5 A, V = 5.0 V) 300 900 C CE (I = 1.0 A, V = 5.0 V) 200 C CE CollectorEmitter Saturation Voltage (Note 3) V V CE(sat) (I = 1.0 A, I = 100 mA) 0.200 C B (I = 0.5 A, I = 50 mA) 0.125 C B (I = 0.1 A, I = 1.0 mA) 0.075 C B BaseEmitter Saturation Voltage (Note 3) V V BE(sat) (I = 1.0 A, I = 0.1 A) 1.1 C B BaseEmitter Turnon Voltage (Note 3) V V BE(on) (I = 1.0 mA, V = 2.0 V) 1.1 C CE Cutoff Frequency f MHz T (I = 100 mA, V = 5.0 V, f = 100 MHz 100 C CE Output Capacitance (f = 1.0 MHz) C pF obo 15 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle 2% 1.0 1.0 0.9 0.9 I = 2 A C 0.8 0.8 0.7 0.7 I = 1 A C 0.6 0.6 0.5 0.5 I /I = 100 c b 0.4 0.4 0.3 0.3 I /I = 10 c b I = 500 mA 0.2 C 0.2 0.1 0.1 I = 100 mA C 0 0 0.001 0.01 0.1 0.2 0.001 0.01 0.1 1 2 I (A) I (A) b c Figure 1. V versus I Figure 2. V versus I CE b CE c www.onsemi.com 2 V (V) CE V (V) CE