NSS40301MDR2G Dual Matched 40 V, 6.0 A, Low V NPN Transistor CE(sat) 2 These transistors are part of the ON Semiconductor e PowerEdge family of Low V transistors. They are assembled to create a pair CE(sat) of devices highly matched in all parameters, including ultra low saturation voltage V , high current gain and Base/Emitter turn on CE(sat) NSS40301MDR2G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit SINGLE HEATED Total Device Dissipation (Note 1) P 576 mW D T = 25C A Derate above 25C 4.6 mW/C Thermal Resistance, JunctiontoAmbient (Note 1) 217 C/W R JA Total Device Dissipation (Note 2) P 676 mW D T = 25C A Derate above 25C 5.4 mW/C Thermal Resistance, JunctiontoAmbient (Note 2) 185 C/W R JA DUAL HEATED (Note 3) Total Device Dissipation (Note 1) P 653 mW D T = 25C A Derate above 25C 5.2 mW/C Thermal Resistance, JunctiontoAmbient (Note 1) R 191 C/W JA Total Device Dissipation (Note 2) P 783 mW D T = 25C A Derate above 25C 6.3 mW/C Thermal Resistance, JunctiontoAmbient (Note 2) R 160 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg 2 1. FR4 10 mm , 1 oz. copper traces, still air. 2 2. FR4 100 mm , 1 oz. copper traces, still air. 3. Dual heated values assume total power is the sum of two equally powered devices.