NSS40302PDR2G Complementary 40 V, 6.0 A, Low V Transistor CE(sat) 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These are designed CE(sat) www.onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are low voltage motor controls in mass storage 40 VOLTS, 6.0 AMPS products such as disc drives and tape drives. In the automotive COMPLEMENTARY LOW industry they can be used in air bag deployment and in the instrument V TRANSISTOR CE(sat) 2 cluster. The high current gain allows e PowerEdge devices to be EQUIVALENT R 80 m DS(on) driven directly from PMUs control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. COLLECTOR COLLECTOR 7,8 5,6 Features NSV Prefix for Automotive and Other Applications Requiring 2 4 Unique Site and Control Change Requirements AECQ101 BASE BASE Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 3 Compliant EMITTER EMITTER MAXIMUM RATINGS (T = 25C) A 8 Rating Symbol Max Unit 1 Collector-Emitter Voltage NPN V 40 Vdc CEO SOIC8 PNP 40 CASE 751 STYLE 16 Collector-Base Voltage NPN V 40 Vdc CBO PNP 40 DEVICE MARKING Emitter-Base Voltage NPN V 6.0 Vdc EBO PNP 7.0 8 Collector Current Continuous NPN I 3.0 A C40302 C PNP 3.0 AYWW Collector Current Peak NPN I 6.0 A CM 1 PNP 6.0 C40302 = Specific Device Code Electrostatic Discharge ESD HBM Class 3B A = Assembly Location MM Class C Y = Year Stresses exceeding those listed in the Maximum Ratings table may damage the WW = Work Week device. If any of these limits are exceeded, device functionality should not be = PbFree Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping NSS40302PDR2G SOIC8 2500 / (PbFree) Tape & Reel NSV40302PDR2G SOIC8 2500 / (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: May, 2015 Rev. 2 NSS40302P/DNSS40302PDR2G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit SINGLE HEATED Total Device Dissipation (Note 1) P 576 mW D T = 25C A Derate above 25C 4.6 mW/C Thermal Resistance, JunctiontoAmbient (Note 1) R 217 C/W JA Total Device Dissipation (Note 2) P 676 mW D T = 25C A Derate above 25C 5.4 mW/C Thermal Resistance, JunctiontoAmbient (Note 2) R 185 C/W JA DUAL HEATED (Note 3) Total Device Dissipation (Note 1) P 653 mW D T = 25C A Derate above 25C 5.2 mW/C Thermal Resistance, JunctiontoAmbient (Note 1) R 191 C/W JA Total Device Dissipation (Note 2) P 783 mW D T = 25C A Derate above 25C 6.3 mW/C Thermal Resistance, JunctiontoAmbient (Note 2) R 160 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg 2 1. FR4 10 mm , 1 oz. copper traces, still air. 2 2. FR4 100 mm , 1 oz. copper traces, still air. 3. Dual heated values assume total power is the sum of two equally powered devices. www.onsemi.com 2