NST847BPDP6T5G Dual Complementary General Purpose Transistor The NST847BPDP6T5G device is a spinoff of our popular SOT23/SOT323/SOT563 threeleaded device. It is designed for general purpose amplifier applications and is housed in the SOT963 sixleaded surface mount package. By putting two discrete devices in www.onsemi.com one package, this device is ideal for lowpower surface mount applications where board space is at a premium. (3) (2) (1) Features h , 200450 FE Q Q Low V , 0.3 V 1 2 CE(sat) Simplifies Circuit Design Reduces Board Space (4) (5) (6) Reduces Component Count NST847BPDP6T5G* This is a PbFree Device *Q1 PNP MAXIMUM RATINGS Q2 NPN Rating Symbol Value Unit Collector Emitter Voltage V 45 Vdc CEO Collector Base Voltage V 50 Vdc CBO Emitter Base Voltage V 6.0 Vdc EBO Collector Current Continuous I 100 mAdc C Electrostatic Discharge HBM ESD 2 SOT963 MM Class B CASE 527AD THERMAL CHARACTERISTICS Characteristic (Single Heated) Symbol Max Unit MARKING DIAGRAM Total Device Dissipation T = 25C P 240 mW A D Derate above 25C (Note 1) 1.9 mW/C Thermal Resistance, Junction-to-Ambient R 520 C/W JA A M (Note 1) Total Device Dissipation T = 25C P 280 mW 1 A D Derate above 25C (Note 2) 2.2 mW/C A = Device Code Thermal Resistance, Junction-to-Ambient R 446 C/W JA (Note 2) M = Date Code Characteristic (Dual Heated) (Note 3) Symbol Max Unit Total Device Dissipation T = 25C P 350 mW A D Derate above 25C (Note 1) 2.8 mW/C ORDERING INFORMATION Thermal Resistance, Junction-to-Ambient R 357 C/W JA Device Package Shipping (Note 1) Total Device Dissipation T = 25C P 420 mW NST847BPDP6T5G SOT963 8000/Tape & Reel A D Derate above 25C (Note 2) 3.4 mW/C (PbFree) Thermal Resistance, Junction-to-Ambient R 297 C/W JA For information on tape and reel specifications, (Note 2) including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Junction and Storage Temperature Range T , T 55 to C J stg Brochure, BRD8011/D. +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1. FR4 100 mm , 1 oz. copper traces, still air. 2 2. FR4 500 mm , 1 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels Semiconductor Components Industries, LLC, 2008 1 Publication Order Number: June, 2017 Rev. 1 NST847BPDP6/DNST847BPDP6T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V V (BR)CEO (I = 1.0 mA, I = 0) (NPN) 45 C B (I = 1.0 mA, I = 0) (PNP) 45 C B Collector Base Breakdown Voltage V V (BR)CBO (I = 10 A, I = 0) (NPN) 50 C E (I = 10 A, I = 0) (PNP) 50 C E Collector Emitter Breakdown Voltage V V (BR)CES (I = 10 A) (NPN) 50 C (I = 10 A) (PNP) 50 C Emitter Base Breakdown Voltage V V (BR)EBO (I = 1.0 A, I = 0) (NPN) 6.0 E C (I = 1.0 A, I = 0) (PNP) 5.0 E C Collector Cutoff Current I CBO (V = 30 V) (NPN) 15 nA CB (V = 30 V, T = 150C) (NPN) 5.0 A CB A (V = 30 V) (PNP) 15 nA CB (V = 30 V, T = 150C) (PNP) 4.0 A CB A ON CHARACTERISTICS (Note 4) DC Current Gain h FE (I = 2.0 mA, V = 5.0 V) (NPN) 200 290 450 C CE (I = 2.0 mA, V = 5.0 V) (PNP) 220 290 475 C CE Collector Emitter Saturation Voltage V V CE(sat) (I = 10 mA, I = 0.5 mA) (NPN) 0.25 C B (I = 100 mA, I = 5.0 mA) 0.60 C B (I = 10 mA, I = 0.5 mA) (PNP) 0.30 C B (I = 100 mA, I = 5.0 mA) 0.70 C B Base Emitter Saturation Voltage V V BE(sat) (I = 10 mA, I = 0.5 mA) (NPN) 0.70 C B (I = 100 mA, I = 5.0 mA) 0.90 C B (I = 10 mA, I = 0.5 mA) (PNP) 0.70 C B (I = 100 mA, I = 5.0 mA) 0.90 C B Base Emitter On Voltage V V BE(on) (I = 2.0 mA, V = 5.0 V) (NPN) 0.58 0.66 0.70 C CE (I = 10 mA, V = 5.0 V) 0.77 C CE (I = 2.0 mA, V = 5.0 V) (PNP) 0.60 0.75 C CE (I = 10 mA, V = 5.0 V) 0.82 C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f MHz T (I = 10 mA, V = 5.0 V, f = 100 MHz) (NPN) 100 C CE (I = 10 mA, V = 5.0 V, f = 100 MHz) (PNP) 100 C CE Output Capacitance C pF ob (V = 10 V, f = 1.0 MHz) (NPN) 4.5 CB (V = 10 V, f = 1.0 MHz) (PNP) 4.5 CB Noise Figure NF dB (I = 0.2 mA, V = 5.0 V, R = 2 k , f = 1 kHz, BW = 200 Hz) (NPN) 10 C CE S (I = 0.2 mA, V = 5.0 V, R = 2 k , f = 1 kHz, BW = 200 Hz) (PNP) 10 C CE S 4. Pulse Test: Pulse Width 300 s Duty Cycle 2.0%. www.onsemi.com 2