NSS1C200L, NSV1C200L Low V Transistor, CE(sat) PNP, 100 V, 2.0 A 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) are designed for use in low voltage, high speed switching applications www.onsemi.com where affordable efficient energy control is important. Typical applications are DCDC converters and power management in portable and battery powered products such as cellular and cordless 100 VOLTS, 2.0 AMPS phones, PDAs, computers, printers, digital cameras and MP3 players. PNP LOW V TRANSISTOR CE(sat) Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive industry they can be used in air bag deployment and in the instrument COLLECTOR 2 cluster. The high current gain allows e PowerEdge devices to be 3 driven directly from PMUs control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. 1 BASE Features NSV Prefix for Automotive and Other Applications Requiring 2 Unique Site and Control Change Requirements AECQ101 EMITTER Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS 3 Compliant 1 MAXIMUM RATINGS (T = 25C) A 2 Rating Symbol Max Unit SOT23 (TO236) Collector-Emitter Voltage V 100 Vdc CASE 318 CEO STYLE 6 Collector-Base Voltage V 140 Vdc CBO Emitter-Base Voltage V 7.0 Vdc EBO MARKING DIAGRAM Collector Current Continuous I 2.0 A C Collector Current Peak I 3.0 A CM VL M THERMAL CHARACTERISTICS 1 Characteristic Symbol Max Unit Total Device Dissipation P (Note 1) 490 mW D T = 25C VL = Specific Device Code A Derate above 25C 3.7 mW/C M = Date Code* = PbFree Package Thermal Resistance, R (Note 1) 255 C/W JA (Note: Microdot may be in either location) JunctiontoAmbient *Date Code orientation and/or overbar may vary depending upon manufacturing location. Total Device Dissipation P (Note 2) 710 mW D T = 25C A 4.3 mW/C Derate above 25C ORDERING INFORMATION Thermal Resistance, R (Note 2) 176 C/W JA JunctiontoAmbient Device Package Shipping Junction and Storage T , T 55 to C J stg NSS1C200LT1G, SOT23 3000/Tape & Reel Temperature Range +150 NSV1C200LT1G (PbFree) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be For information on tape and reel specifications, assumed, damage may occur and reliability may be affected. including part orientation and tape sizes, please 2 1. FR4 100 mm , 1 oz. copper traces. refer to our Tape and Reel Packaging Specification 2 2. FR4 500 mm , 1 oz. copper traces. Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2007 1 Publication Order Number: October, 2016 Rev. 6 NSS1C200L/DNSS1C200L, NSV1C200L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, I = 0) 100 C B Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 0.1 mAdc, I = 0) 140 C E Emitter Base Breakdown Voltage V Vdc (BR)EBO (I = 0.1 mAdc, I = 0) 7.0 E C Collector Cutoff Current I nAdc CBO (V = 140 Vdc, I = 0) 100 CB E Emitter Cutoff Current I nAdc EBO (V = 6.0 Vdc) 50 EB ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 10 mA, V = 2.0 V) 150 C CE (I = 500 mA, V = 2.0 V) 120 240 360 C CE (I = 1.0 A, V = 2.0 V) 80 C CE (I = 2.0 A, V = 2.0 V) 50 C CE Collector Emitter Saturation Voltage (Note 3) V V CE(sat) (I = 0.1 A, I = 0.01 A) 0.040 C B (I = 0.5 A, I = 0.05 A) 0.080 C B (I = 1.0 A, I = 0.100 A) 0.115 C B (I = 2.0 A, I = 0.200 A) 0.250 C B Base Emitter Saturation Voltage (Note 3) V V BE(sat) (I = 1.0 A, I = 0.100 A) 0.950 C B Base Emitter Turnon Voltage (Note 3) V V BE(on) (I = 1.0 A, V = 2.0 V) 0.850 C CE Cutoff Frequency f MHz T (I = 100 mA, V = 5.0 V, f = 100 MHz) 120 C CE Input Capacitance (V = 2.0 V, f = 1.0 MHz) Cibo 200 pF EB Output Capacitance (V = 10 V, f = 1.0 MHz) Cobo 22 pF CB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. 0.60 0.50 Note 2 0.40 0.30 Note 1 0.20 0.10 0 0 20 40 60 80 100 120 140 160 T , AMBIENT TEMPERATURE (C) A Figure 1. Power Derating www.onsemi.com 2 P , POWER DISSIPATION (W) D