PNP Transistor, Low V CE(sat) 100 V, 2.0 A NSS1C200MZ4, NSV1C200MZ4 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low www.onsemi.com saturation voltage (V ) and high current gain capability. These CE(sat) are designed for use in low voltage, high speed switching applications 100 VOLTS, 2.0 AMPS where affordable efficient energy control is important. PNP LOW V TRANSISTOR CE(sat) Typical applications are DCDC converters and power management in portable and battery powered products such as cellular and cordless COLLECTOR phones, PDAs, computers, printers, digital cameras and MP3 players. 2,4 Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive 1 industry they can be used in air bag deployment and in the instrument 2 BASE cluster. The high current gain allows e PowerEdge devices to be driven directly from PMUs control outputs, and the Linear Gain 3 (Beta) makes them ideal components in analog amplifiers. EMITTER Features NSV Prefix for Automotive and Other Applications Requiring MARKING Unique Site and Control Change Requirements AECQ101 DIAGRAM Qualified and PPAP Capable These Devices are PbFree, Halogen Free and are RoHS Compliant SOT223 AYW CASE 318E MAXIMUM RATINGS (T = 25C) 1C200 A STYLE 1 Rating Symbol Max Unit 1 Collector-Emitter Voltage V 100 Vdc CEO A = Assembly Location Collector-Base Voltage V 140 Vdc CBO Y = Year Emitter-Base Voltage V 7.0 Vdc W = Work Week EBO 1C200 = Specific Device Code Base Current Continuous I 1.0 A B = PbFree Package Collector Current Continuous I 2.0 A C Collector Current Peak I 3.0 A CM PIN ASSIGNMENT THERMAL CHARACTERISTICS 4 Characteristic Symbol Max Unit C Total Device Dissipation P (Note 1) D T = 25C 800 mW A Derate above 25C 6.5 mW/C B CE Thermal Resistance, R (Note 1) 155 C/W JA 12 3 JunctiontoAmbient Top View Pinout Total Device Dissipation P (Note 2) D T = 25C 2.0 W A ORDERING INFORMATION Derate above 25C 15.6 mW/C Thermal Resistance, R (Note 2) 64 C/W Device Package Shipping JA JunctiontoAmbient NSS1C200MZ4T1G SOT223 1000/ Junction and Storage T , T 55 to C J stg NSV1C200MZ4T1G (PbFree) Tape & Reel Temperature Range +150 NSS1C200MZ4T3G SOT223 4000/ Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) Tape & Reel device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. For information on tape and reel specifications, 2 1. FR4 7.6 mm , 1 oz. copper traces. including part orientation and tape sizes, please 2 2. FR4 645 mm , 1 oz. copper traces. refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: March, 2021 Rev. 6 NSS1C200MZ4/DNSS1C200MZ4, NSV1C200MZ4 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (I = 10 mAdc, I = 0) V 100 Vdc C B (BR)CEO Collector Base Breakdown Voltage (I = 0.1 mAdc, I = 0) V 140 Vdc C E (BR)CBO Emitter Base Breakdown Voltage (I = 0.1 mAdc, I = 0) V 7.0 Vdc E C (BR)EBO Collector Cutoff Current (V = 140 Vdc, I = 0) I 100 nAdc CB E CBO Emitter Cutoff Current (V = 6.0 Vdc) I 50 nAdc EB EBO ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 10 mA, V = 2.0 V) 150 C CE (I = 500 mA, V = 2.0 V) 120 360 C CE (I = 1.0 A, V = 2.0 V) 80 C CE (I = 2.0 A, V = 2.0 V) 50 C CE Collector Emitter Saturation Voltage (Note 3) V V CE(sat) (I = 0.1 A, I = 0.010 A) 0.040 C B (I = 0.5 A, I = 0.050 A) 0.080 C B (I = 1.0 A, I = 0.100 A) 0.125 C B (I = 2.0 A, I = 0.200 A) 0.220 C B Base Emitter Saturation Voltage (Note 3) V V BE(sat) (I = 1.0 A, I = 0.100 A) 0.950 C B Base Emitter Turnon Voltage (Note 3) V V BE(on) (I = 1.0 A, V = 2.0 V) 0.850 C CE Cutoff Frequency f MHz T (I = 100 mA, V = 5.0 V, f = 100 MHz) 120 C CE Input Capacitance (V = 3.0 V, f = 1.0 MHz) Cibo 200 pF EB Output Capacitance (V = 10 V, f = 1.0 MHz) Cobo 22 pF CB 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. www.onsemi.com 2