NSS1C201MZ4, NSV1C201MZ4 100 V, 2.0 A, Low V CE(sat) NPN Transistor 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) NSS1C201MZ4, NSV1C201MZ4 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (I = 10 mAdc, I = 0) V 100 Vdc C B (BR)CEO Collector Base Breakdown Voltage (I = 0.1 mAdc, I = 0) V 140 Vdc C E (BR)CBO Emitter Base Breakdown Voltage (I = 0.1 mAdc, I = 0) V 7.0 Vdc E C (BR)EBO Collector Cutoff Current (V = 140 Vdc, I = 0) I 100 nA CB E CBO Emitter Cutoff Current (V = 6.0 Vdc) I 50 nA EB EBO ON CHARACTERISTICS DC Current Gain (Note 4) h FE (I = 10 mA, V = 2.0 V) 150 C CE (I = 500 mA, V = 2.0 V) 120 360 C CE (I = 1.0 A, V = 2.0 V) 80 C CE (I = 2.0 A, V = 2.0 V) 40 C CE Collector Emitter Saturation Voltage (Note 4) V V CE(sat) (I = 0.1 A, I = 0.010 A) 0.030 C B (I = 0.5 A, I = 0.050 A) 0.060 C B (I = 1.0 A, I = 0.100 A) 0.100 C B (I = 2.0 A, I = 0.200 A) 0.180 C B Base Emitter Saturation Voltage (Note 4) V V BE(sat) (I = 1.0 A, I = 0.100 A) 1.10 C B Base Emitter Turnon Voltage (Note 4) (I = 1.0 A, V = 2.0 V) V 0.850 V C CE BE(on) Cutoff Frequency (I = 100 mA, V = 5.0 V, f = 100 MHz) f 100 MHz C CE T Input Capacitance (V = 0.5 V, f = 1.0 MHz) Cibo 305 pF EB Output Capacitance (V = 3.0 V, f = 1.0 MHz) Cobo 22 pF CB 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. TYPICAL CHARACTERISTICS 2.5 2.0 T C 1.5 1.0 T A 0.5 0 25 50 75 100 125 150 T, TEMPERATURE (C) Figure 1. Power Derating