NSS1C300ET4G 100 V, 3.0 A, Low V CE(sat) PNP Transistor 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These are designed CE(sat) www.onsemi.com for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications are DCDC converters and power management 100 VOLTS, 3.0 AMPS in portable and battery powered products such as cellular and cordless PNP LOW V TRANSISTOR CE(sat) phones, PDAs, computers, printers, digital cameras and MP3 players. Other applications are low voltage motor controls in mass storage COLLECTOR products such as disc drives and tape drives. In the automotive 2, 4 industry they can be used in air bag deployment and in the instrument 2 cluster. The high current gain allows e PowerEdge devices to be 1 driven directly from PMUs control outputs, and the Linear Gain BASE (Beta) makes them ideal components in analog amplifiers. Features 3 EMITTER Complement to NSS1C301ET4G NSV Prefix for Automotive and Other Applications Requiring 4 Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 2 1 These Devices are PbFree and are RoHS Compliant 3 DPAK MAXIMUM RATINGS (T = 25C) A CASE 369C Rating Symbol Max Unit STYLE 1 CollectorBase Voltage V 140 Vdc CBO MARKING DIAGRAM CollectorEmitter Voltage V 100 Vdc CEO EmitterBase Voltage V 6.0 Vdc EB YWW Collector Current Continuous I 3.0 Adc C 1C30EG Collector Current Peak I 6.0 Adc CM Base Current I 0.5 Adc B Y = Year Total Power Dissipation P D WW = Work Week 33 W T = 25C C 1C30E = Device Code 0.26 W/C Derate above 25C G = PbFree Total Power Dissipation (Note 1) P D 2.1 W T = 25C A 0.017 W/C Derate above 25C ORDERING INFORMATION Operating and Storage Junction T , T 65 to +150 C J stg Device Package Shipping Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the NSS1C300ET4G DPAK 2500/ device. If any of these limits are exceeded, device functionality should not be (PbFree) Tape & Reel assumed, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad NSV1C300ET4G DPAK 2500/ sizes recommended. (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2015 Rev. 7 NSS1C300E/DNSS1C300ET4G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 3.8 C/W JC Thermal Resistance, JunctiontoAmbient (Note 2) R 59.5 C/W JA 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, I = 0) 100 C B CollectorBase Breakdown Voltage V Vdc (BR)CBO (I = 0.1 mAdc, I = 0) 140 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 0.1 mAdc, I = 0) 6.0 E C Collector Cutoff Current I Adc CBO (V = 140 Vdc, I = 0) 0.1 CB E Emitter Cutoff Current I Adc EBO (V = 6.0 Vdc) 0.1 EB ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 0.1 A, V = 2.0 V) 180 C CE (I = 0.5 A, V = 2.0 V) 180 C CE (I = 1.0 A, V = 2.0 V) 120 360 C CE (I = 3.0 A, V = 2.0 V) 50 C CE CollectorEmitter Saturation Voltage (Note 3) V V CE(sat) (I = 0.1 A, I = 10 mA) 0.070 C B (I = 1.0 A, I = 0.100 A) 0.150 C B (I = 2.0 A, I = 0.200 A) 0.250 C B (I = 3.0 A, I = 0.300 A) 0.400 C B BaseEmitter Saturation Voltage (Note 3) V V BE(sat) (I = 1.0 A, I = 0.1 A) 1.0 C B BaseEmitter Turnon Voltage (Note 3) V V BE(on) (I = 1.0 A, V = 2.0 V) 0.900 C CE Cutoff Frequency f MHz T (I = 500 mA, V = 10 V, f = 100 MHz) 100 C CE Input Capacitance Cibo pF (V = 5.0 V, f = 1.0 MHz) 360 EB Output Capacitance Cobo pF (V = 10 V, f = 1.0 MHz) 60 CB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. www.onsemi.com 2