NSS1C301ET4G 100 V, 3.0 A, Low V CE(sat) NPN Transistor 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These are designed CE(sat) for use in low voltage, high speed switching applications where www.onsemi.com affordable efficient energy control is important. Typical applications are DCDC converters and power management 100 VOLTS, 3.0 AMPS in portable and battery powered products such as cellular and cordless 12.5 WATTS phones, PDAs, computers, printers, digital cameras and MP3 players. NPN LOW V TRANSISTOR CE(sat) Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive COLLECTOR industry they can be used in air bag deployment and in the instrument 2 2, 4 cluster. The high current gain allows e PowerEdge devices to be driven directly from PMUs control outputs, and the Linear Gain (Beta) makes them ideal components in analog amplifiers. 1 BASE Features Complement to NSS1C300ET4G 3 EMITTER NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 4 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant 2 1 3 MAXIMUM RATINGS (T = 25C) A DPAK Rating Symbol Max Unit CASE 369C CollectorBase Voltage V 140 Vdc CBO STYLE 1 CollectorEmitter Voltage V 100 Vdc CEO MARKING DIAGRAM EmitterBase Voltage V 6.0 Vdc EB Collector Current Continuous I 3.0 Adc C Collector Current Peak I 6.0 Adc CM YWW Base Current I 0.5 Adc B 1C31EG Total Power Dissipation P D T = 25C 33 W C 0.26 W/C Derate above 25C Y = Year Total Power Dissipation (Note 1) P D WW = Work Week 2.1 W T = 25C A 1C31E = Device Code 0.017 W/C Derate above 25C G = PbFree Operating and Storage Junction T , T 65 to +150 C J stg Temperature Range ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be Device Package Shipping assumed, damage may occur and reliability may be affected. 1. These ratings are applicable when surface mounted on the minimum pad NSS1C301ET4G DPAK 2500/ sizes recommended. (PbFree) Tape & Reel NSV1C301ET4G DPAK 2500/ (PbFree) Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: March, 2016 Rev. 5 NSS1C301E/DNSS1C301ET4G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R 3.8 C/W JC Thermal Resistance, JunctiontoAmbient (Note 2) R 59.5 C/W JA 2. These ratings are applicable when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V V (BR)CEO (I = 10 mA, I = 0) 100 C B CollectorBase Breakdown Voltage V V (BR)CBO (I = 0.1 mA, I = 0) 140 C E EmitterBase Breakdown Voltage V V (BR)EBO (I = 0.1 mA, I = 0) 6.0 E C Collector Cutoff Current I A CBO (V = 140 V, I = 0) 0.1 CB E Emitter Cutoff Current I A EBO (V = 6.0 V) 0.1 EB ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 0.1 A, V = 2.0 V) 200 C CE (I = 0.5 A, V = 2.0 V) 200 C CE (I = 1.0 A, V = 2.0 V) 120 360 C CE (I = 3.0 A, V = 2.0 V) 80 C CE CollectorEmitter Saturation Voltage (Note 3) V V CE(sat) (I = 0.1 A, I = 10 mA) 0.015 0.050 C B (I = 1.0 A, I = 0.100 A) 0.045 0.090 C B (I = 2.0 A, I = 0.200 A) 0.080 0.150 C B (I = 3.0 A, I = 0.300 A) 0.115 0.250 C B BaseEmitter Saturation Voltage (Note 3) V V BE(sat) (I = 1.0 A, I = 0.1 A) 1.0 C B BaseEmitter Turnon Voltage (Note 3) V V BE(on) (I = 1.0 A, V = 2.0 V) 0.90 C CE Cutoff Frequency f MHz T (I = 500 mA, V = 10 V, f = 100 MHz) 120 C CE Input Capacitance Cibo pF (V = 5.0 V, f = 1.0 MHz) 360 EB Output Capacitance Cobo pF (V = 10 V, f = 1.0 MHz) 30 CB 3. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle 2%. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2