NSS20101J, NSV20101J 20 V, 1.0 A, Low V CE(sat) NPN Transistor 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) NSS20101J, NSV20101J MAXIMUM RATINGS (T = 25C) A Rating Symbol Max Unit Collector-Emitter Voltage V 20 Vdc CEO Collector-Base Voltage V 40 Vdc CBO Emitter-Base Voltage V 6.0 Vdc EBO Collector Current Continuous I 1.0 A C Collector Current Peak I 2.0 A CM Electrostatic Discharge ESD HBM Class 3B MM Class C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation P (Note 1) D T = 25C 255 mW A Derate above 25C 2.0 mW/C Thermal Resistance, C/W R (Note 1) JA Junction toAmbient 490 Total Device Dissipation P (Note 2) D T = 25C 300 mW A Derate above 25C 2.4 mW/C Thermal Resistance, R (Note 2) C/W JA Junction toAmbient 415 Junction and Storage Temperature Range T , T 55 to +150 C J stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2 1. FR4 100 mm , 1 oz. copper traces. 2 2. FR4 500 mm , 1 oz. copper traces.