X-On Electronics has gained recognition as a prominent supplier of NSV20101JT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NSV20101JT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NSV20101JT1G ON Semiconductor

NSV20101JT1G electronic component of ON Semiconductor
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Part No.NSV20101JT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 20V 1A Automotive 3-Pin SC-89 T/R
Datasheet: NSV20101JT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
569: USD 0.7166 ea
Line Total: USD 407.75 
Availability - 0
MOQ: 569  Multiples: 569
Pack Size: 569
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 569
Multiples : 569
569 : USD 0.7166

0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.8135

   
Manufacturer
Product Category
Transistor Polarity
Packaging
Collector-Base Voltage
Collector-Emitter Voltage
Power Dissipation
Operating Temperature Classification
Operating Temp Range
Number Of Elements
Category
Mounting
Collector Current Dc
Frequency
Rad Hardened
Emitter-Base Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NSV20101JT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSV20101JT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NSS20101J, NSV20101J 20 V, 1.0 A, Low V CE(sat) NPN Transistor 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These CE(sat) NSS20101J, NSV20101J MAXIMUM RATINGS (T = 25C) A Rating Symbol Max Unit Collector-Emitter Voltage V 20 Vdc CEO Collector-Base Voltage V 40 Vdc CBO Emitter-Base Voltage V 6.0 Vdc EBO Collector Current Continuous I 1.0 A C Collector Current Peak I 2.0 A CM Electrostatic Discharge ESD HBM Class 3B MM Class C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation P (Note 1) D T = 25C 255 mW A Derate above 25C 2.0 mW/C Thermal Resistance, C/W R (Note 1) JA Junction toAmbient 490 Total Device Dissipation P (Note 2) D T = 25C 300 mW A Derate above 25C 2.4 mW/C Thermal Resistance, R (Note 2) C/W JA Junction toAmbient 415 Junction and Storage Temperature Range T , T 55 to +150 C J stg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2 1. FR4 100 mm , 1 oz. copper traces. 2 2. FR4 500 mm , 1 oz. copper traces.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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