NSS60600MZ4 Low V Transistor, CE(sat) PNP, 60 V, 6.0 A, SOT-223 Package 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation www.onsemi.com voltage (V ) and high current gain capability. These are designed CE(sat) for use in low voltage, high speed switching applications where 60 VOLTS, 6.0 AMPS affordable efficient energy control is important. 2.0 WATTS Typical applications are DCDC converters and power management PNP LOW V TRANSISTOR in portable and battery powered products such as cellular and cordless CE(sat) phones, PDAs, computers, printers, digital cameras and MP3 players. EQUIVALENT R 50 m DS(on) Other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. In the automotive 4 industry they can be used in air bag deployment and in the instrument 2 cluster. The high current gain allows e PowerEdge devices to be 1 2 driven directly from PMUs control outputs, and the Linear Gain 3 (Beta) makes them ideal components in analog amplifiers. SOT223 CASE 318E Features STYLE 1 Complementary to NSS60601MZ4 C 2, 4 NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* B 1 E 3 MAXIMUM RATINGS (T = 25C) A MARKING DIAGRAM Rating Symbol Max Unit Collector-Emitter Voltage V 60 Vdc CEO AYW Collector-Base Voltage V 100 Vdc CBO 60600 Emitter-Base Voltage V 6.0 Vdc EBO 1 Collector Current Continuous I 6.0 A A = Assembly Location C Y = Year Collector Current Peak I 12.0 A CM W = Work Week Stresses exceeding those listed in the Maximum Ratings table may damage the 60600 = Specific Device Code device. If any of these limits are exceeded, device functionality should not be = PbFree Package assumed, damage may occur and reliability may be affected. PIN ASSIGNMENT 4 C B CE 12 3 Top View Pinout *For additional information on our PbFree strategy and soldering details, please ORDERING INFORMATION download the ON Semiconductor Soldering and Mounting Techniques See detailed ordering and shipping information in the package Reference Manual, SOLDERRM/D. dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2016 Rev. 5 NSS60600MZ4/DNSS60600MZ4 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation P (Note 1) D T = 25C 800 mW A Derate above 25C 6.5 mW/C Thermal Resistance, R (Note 1) C/W JA JunctiontoAmbient 155 Total Device Dissipation P (Note 2) D T = 25C 2 W A Derate above 25C 15.6 mW/C Thermal Resistance, R (Note 2) C/W JA JunctiontoAmbient 64 Total Device Dissipation P mW Dsingle (Single Pulse < 10 sec.) (Note 3) 710 Junction and Storage Temperature Range T , T 55 to +150 C J stg 2 1. FR4 7.6 mm , 1 oz. copper traces. 2 2. FR4 645 mm , 1 oz. copper traces. 3. Thermal response. ORDERING INFORMATION Device Package Shipping NSS60600MZ4T1G SOT223 1,000 / Tape & Reel (PbFree) NSV60600MZ4T1G SOT223 1,000 / Tape & Reel (PbFree) NSS60600MZ4T3G SOT223 4,000 / Tape & Reel (PbFree) NSV60600MZ4T3G SOT223 4,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2