X-On Electronics has gained recognition as a prominent supplier of NSV60601MZ4T1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NSV60601MZ4T1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NSV60601MZ4T1G ON Semiconductor

Name: NSV60601MZ4T1G
Brand: ON Semiconductor
SKU: NSV60601MZ4T1G_ON_Semiconductor
Availability: InStock
Rating: 5 (11 reviews)

NSV60601MZ4T1G electronic component of ON Semiconductor

NSV60601MZ4T1G Bipolar Transistors - BJT

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See Product Specifications

Part No.	NSV60601MZ4T1G
Manufacturer:	ON Semiconductor
Category:	Bipolar Transistors - BJT
Description:	ON Semiconductor Bipolar Transistors - BJT NPN 60V6A LOW VCE(SAT)
Datasheet:	NSV60601MZ4T1G Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.7812 ea
Line Total: USD 0.78

Availability - 157537
Ship by Fri. 07 Mar to Tue. 11 Mar

MOQ: 1 Multiples: 1
Pack Size: 1

NSV60601MZ4T1G More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

157537

Ship by Fri. 07 Mar to Tue. 11 Mar

MOQ : 1
Multiples : 1

1 : USD 0.7812
10 : USD 0.555
100 : USD 0.3421
500 : USD 0.2937
1000 : USD 0.2563
2000 : USD 0.2365
5000 : USD 0.2266

Specifications

Manufacturer

ON Semiconductor ON Semiconductor

Product Category

Bipolar Transistors - BJT Bipolar Transistors - BJT

RoHS - XON

Y Y

Mounting Style

Smd/Smt Smd/Smt

Package / Case

SOT - 223 - 4 SOT - 223 - 4

Transistor Polarity

Npn Npn

Configuration

Single Single

Maximum DC Collector Current

12 A 12 A

Collector- Emitter Voltage VCEO Max

60 V 60 V

Collector- Base Voltage VCBO

100 V 100 V

Emitter- Base Voltage VEBO

6 V 6 V

Collector-Emitter Saturation Voltage

0.085 V 0.085 V

Pd - Power Dissipation

2 W 2 W

Gain Bandwidth Product fT

100 Mhz 100 Mhz

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Qualification

Aec - Q101 Aec - Q101

Series

Nss60601mz4 Nss60601mz4

Packaging

Reel Reel

Dc Current Gain Hfe Max

360 @ 1 a @ 2 v 360 @ 1 a @ 2 v

Brand

On Semiconductor On Semiconductor

Dc Collector/Base Gain Hfe Min

120 At 1 A At 2 V 120 At 1 A At 2 V

Factory Pack Quantity :

1000 1000

Cnhts

8541210000 8541210000

Hts Code

8541290095 8541290095

Mxhts

85412101 85412101

Product Type

Bjts - Bipolar Transistors Bjts - Bipolar Transistors

Subcategory

Transistors Transistors

Taric

8541210000 8541210000

Notes:- Show Stocked Products With Similar Attributes.

NSV60601MZ4T1G Alternative Parts

We are delighted to provide the NSV60601MZ4T1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSV60601MZ4T1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

NSS60601MZ4 Low V Transistor, CE(sat) NPN, 60 V, 6.0 A 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (V ) and high current gain capability. These are designed CE(sat) NSS60601MZ4 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation P (Note 1) D T = 25C 800 mW A Derate above 25C 6.5 mW/C Thermal Resistance, R (Note 1) 155 C/W JA Junction toAmbient Total Device Dissipation P (Note 2) D T = 25C 2 W A Derate above 25C 15.6 mW/C Thermal Resistance, R (Note 2) C/W JA Junction toAmbient 64 Total Device Dissipation P mW Dsingle (Single Pulse < 10 sec.) (Note 3) 710 Junction and Storage Temperature Range T , T 55 to +150 C J stg 2 1. FR4 7.6 mm , 1 oz. copper traces. 2 2. FR4 645 mm , 1 oz. copper traces. 3. Thermal response. ORDERING INFORMATION Device Package Shipping NSS60601MZ4T1G SOT223 1,000 / Tape & Reel (Pb Free) NSV60601MZ4T1G* SOT223 1,000 / Tape & Reel (Pb Free) NSS60601MZ4T3G SOT223 4,000 / Tape & Reel (Pb Free) NSV60601MZ4T3G* SOT223 4,000 / Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
157537 Ship by Fri. 07 Mar to Tue. 11 Mar MOQ : 1 Multiples : 1	1 : USD 0.7812 10 : USD 0.555 100 : USD 0.3421 500 : USD 0.2937 1000 : USD 0.2563 2000 : USD 0.2365 5000 : USD 0.2266

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