X-On Electronics has gained recognition as a prominent supplier of NSVDTA144WET1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NSVDTA144WET1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NSVDTA144WET1G ON Semiconductor

NSVDTA144WET1G electronic component of ON Semiconductor
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See Product Specifications
Part No.NSVDTA144WET1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SS SC75 BR XSTR PNP
Datasheet: NSVDTA144WET1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1172 ea
Line Total: USD 0.12 
Availability - 957
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
957
Ship by Mon. 23 Dec to Wed. 25 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1172
10 : USD 0.0778
100 : USD 0.0404
1000 : USD 0.0362
3000 : USD 0.0277
9000 : USD 0.0245
24000 : USD 0.0224
45000 : USD 0.0224
99000 : USD 0.0213

   
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We are delighted to provide the NSVDTA144WET1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSVDTA144WET1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MUN2137, MMUN2137L, MUN5137, DTA144WE, DTA144WM3, NSBA144WF3 Digital Transistors (BRT) R1 = 47 k , R2 = 22 k www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT) contains a single transistor with a monolithic bias (INPUT) R2 network consisting of two resistors a series base resistor and a base emitter resistor. The BRT eliminates these individual PIN 2 components by integrating them into a single device. The use of a BRT EMITTER (GROUND) can reduce both system cost and board space. MARKING DIAGRAMS Features Simplifies Circuit Design SC59 Reduces Board Space XX M CASE 318D Reduces Component Count STYLE 1 S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable SOT23 XXX M These Devices are PbFree, Halogen Free/BFR Free and are RoHS CASE 318 Compliant STYLE 6 1 MAXIMUM RATINGS (T = 25C) A SC70/SOT323 XX M Rating Symbol Max Unit CASE 419 STYLE 3 CollectorBase Voltage V 50 Vdc CBO 1 CollectorEmitter Voltage V 50 Vdc CEO SC75 Collector Current Continuous I 100 mAdc XX M CASE 463 C STYLE 1 1 Input Forward Voltage V 40 Vdc IN(fwd) Input Reverse Voltage V 10 Vdc IN(rev) SOT723 XX M CASE 631AA Stresses exceeding those listed in the Maximum Ratings table may damage the STYLE 1 device. If any of these limits are exceeded, device functionality should not be 1 assumed, damage may occur and reliability may be affected. SOT1123 X M CASE 524AA 1 STYLE 1 XXX = Specific Device Code M = Date Code* =PbFree Package (Note: Microdot may be in either location) *Date Code orientation may vary depending up- on manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: October, 2016 Rev. 5 DTA144W/DMUN2137, MMUN2137L, MUN5137, DTA144WE, DTA144WM3, NSBA144WF3 Table 1. ORDERING INFORMATION Device Part Marking Package Shipping MUN2137T1G 6P SC59 3000 / Tape & Reel (PbFree) MMUN2137LT1G, ACD SOT23 3000 / Tape & Reel NSVMMUN2137LT1G* (PbFree) MUN5137T1G 6P SC70/SOT323 3000 / Tape & Reel (PbFree) DTA144WET1G, 6P SC75 3000 / Tape & Reel NSVDTA144WET1G* (PbFree) DTA144WM3T5G 6P SOT723 8000 / Tape & Reel (PbFree) NSBA144WF3T5G D (90)** SOT1123 8000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. **(XX) = Degree rotation in the clockwise direction. 300 250 (1) SC75 and SC70/SOT323 Minimum Pad 200 (2) SC59 Minimum Pad (1) (2) (3) (4) (5) (3) SOT23 Minimum Pad 150 2 (4) SOT1123 100 mm , 1 oz. copper trace (5) SOT723 Minimum Pad 100 50 0 50 25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Figure 1. Derating Curve Table 2. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit THERMAL CHARACTERISTICS (SC59) (MUN2137) Total Device Dissipation P D T = 25C (Note 1) 230 mW A (Note 2) 338 Derate above 25C (Note 1) 1.8 mW/C (Note 2) 2.7 Thermal Resistance, (Note 1) R 540 C/W JA Junction to Ambient (Note 2) 370 Thermal Resistance, (Note 1) R 264 C/W JL Junction to Lead (Note 2) 287 Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. FR4 Minimum Pad. 2. FR4 1.0 x 1.0 Inch Pad. 2 3. FR4 100 mm , 1 oz. copper traces, still air. 2 4. FR4 500 mm , 1 oz. copper traces, still air. www.onsemi.com 2 P , POWER DISSIPATION (mW) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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