X-On Electronics has gained recognition as a prominent supplier of NSVDTC113EM3T5G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NSVDTC113EM3T5G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NSVDTC113EM3T5G ON Semiconductor

NSVDTC113EM3T5G electronic component of ON Semiconductor
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See Product Specifications
Part No.NSVDTC113EM3T5G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN DIGITAL TRANSIST
Datasheet: NSVDTC113EM3T5G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3388 ea
Line Total: USD 0.34 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3388
10 : USD 0.2798
100 : USD 0.2196
1000 : USD 0.0981
2500 : USD 0.0847
8000 : USD 0.0468
24000 : USD 0.0435
48000 : USD 0.0423
96000 : USD 0.039

   
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We are delighted to provide the NSVDTC113EM3T5G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSVDTC113EM3T5G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MUN2230, MMUN2230L, MUN5230, DTC113EE, DTC113EM3, NSBC113EF3 Digital Transistors (BRT) R1 = 1 k , R2 = 1 k www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 BASE Transistor (BRT) contains a single transistor with a monolithic bias (INPUT) R2 network consisting of two resistors a series base resistor and a base emitter resistor. The BRT eliminates these individual components by PIN 2 integrating them into a single device. The use of a BRT can reduce EMITTER both system cost and board space. (GROUND) Features MARKING DIAGRAMS Simplifies Circuit Design Reduces Board Space SC59 XX M Reduces Component Count CASE 318D STYLE 1 S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AEC-Q101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS SOT23 XXX M CASE 318 Compliant STYLE 6 1 MAXIMUM RATINGS (T = 25C) A Rating Symbol Max Unit SC70/SOT323 XX M CASE 419 CollectorBase Voltage V 50 Vdc CBO STYLE 3 CollectorEmitter Voltage V 50 Vdc CEO 1 Collector Current Continuous I 100 mAdc C SC75 Input Forward Voltage V 10 Vdc XX M CASE 463 IN(fwd) STYLE 1 Input Reverse Voltage V 10 Vdc IN(rev) 1 Stresses exceeding those listed in the Maximum Ratings table may damage the SOT723 device. If any of these limits are exceeded, device functionality should not be XX M CASE 631AA assumed, damage may occur and reliability may be affected. STYLE 1 1 SOT1123 X M CASE 524AA 1 STYLE 1 XXX = Specific Device Code M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation may vary depending up- on manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: November, 2016 Rev. 4 DTC113E/DMUN2230, MMUN2230L, MUN5230, DTC113EE, DTC113EM3, NSBC113EF3 Table 1. ORDERING INFORMATION Device Part Marking Package Shipping MUN2230T1G, SMUN2230T1G* 8G SC59 3000 / Tape & Reel (PbFree) MMUN2230LT1G, NSVMMUN2230LT1G* A8G SOT23 3000 / Tape & Reel (PbFree) MUN5230T1G 8G SC70/SOT323 3000 / Tape & Reel (PbFree) DTC113EET1G 7Q SC75 3000 / Tape & Reel (PbFree) DTC113EM3T5G, NSVDTC113EM3T5G* 7A SOT723 8000 / Tape & Reel (PbFree) NSBC113EF3T5G D (180)** SOT1123 8000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AEC-Q101 Qualified and PPAP Capable. ** (xx) = Degree rotation in the clockwise direction. 300 250 (1) SC75 and SC70/SOT323 Minimum Pad 200 (2) SC59 Minimum Pad (1) (2) (3) (4) (5) (3) SOT23 Minimum Pad 2 150 (4) SOT1123 100 mm , 1 oz. copper trace (5) SOT723 Minimum Pad 100 50 0 50 25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Figure 1. Derating Curve www.onsemi.com 2 P , POWER DISSIPATION (mW) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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