MMBT6520L, NSVMMBT6520L High Voltage Transistor PNP Silicon www.onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements AECQ101 3 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V 350 Vdc CEO 3 SOT23 (TO236) CollectorBase Voltage V 350 Vdc CBO CASE 318 1 EmitterBase Voltage V 5.0 Vdc EBO STYLE 6 2 Base Current I 250 mA B Collector Current Continuous I 500 mAdc C THERMAL CHARACTERISTICS MARKING DIAGRAM Characteristic Symbol Max Unit Total Device Dissipation FR5 Board, P D (Note 1) T = 25C 225 mW A 2Z M Derate above 25C 1.8 mW/C 1 Thermal Resistance, JunctiontoAmbient R 556 C/W JA Total Device Dissipation Alumina P D 2Z = Device Code Substrate, (Note 2) T = 25C 300 mW A M = Date Code* Derate above 25C 2.4 mW/C = PbFree Package Thermal Resistance, JunctiontoAmbient R 417 C/W JA (Note: Microdot may be in either location) *Date Code orientation and/or overbar may Junction and Storage Temperature T , T 55 to +150 C J stg vary depending upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. ORDERING INFORMATION Device Package Shipping MMBT6520LT1G SOT23 3000 / Tape & (PbFree) Reel MMBT6520LT3G SOT23 10,000 / Tape & (PbFree) Reel NSVMMBT6520LT1G SOT23 3,000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: October, 2016 Rev. 7 MMBT6520LT1/DMMBT6520L, NSVMMBT6520L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V 350 Vdc (BR)CEO (I = 1.0 mA) C CollectorBase Breakdown Voltage V 350 Vdc (BR)CBO (I = 100 A) C EmitterBase Breakdown Voltage V 5.0 Vdc (BR)EBO (I = 10 A) E Collector Cutoff Current I 50 nA CBO (V = 250 V) CB Emitter Cutoff Current I 50 nA EBO (V = 4.0 V) EB ON CHARACTERISTICS DC Current Gain h FE (I = 1.0 mA, V = 10 V) 20 C CE (I = 10 mA, V = 10 V) 30 C CE (I = 30 mA, V = 10 V) 30 200 C CE (I = 50 mA, V = 10 V) 20 200 C CE (I = 100 mA, V = 10 V) 15 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 10 mA, I = 1.0 mA) 0.30 C B (I = 20 mA, I = 2.0 mA) 0.35 C B (I = 30 mA, I = 3.0 mA) 0.50 C B (I = 50 mA, I = 5.0 mA) 1.0 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 10 mA, I = 1.0 mA) 0.75 C B (I = 20 mA, I = 2.0 mA) 0.85 C B (I = 30 mA, I = 3.0 mA) 0.90 C B BaseEmitter On Voltage V 2.0 Vdc BE(on) (I = 100 mA, V = 10 V) C CE SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product f 40 200 MHz T (I = 10 mA, V = 20 V, f = 20 MHz) C CE CollectorBase Capacitance C 6.0 pF cb (V = 20 V, f = 1.0 MHz) CB EmitterBase Capacitance C 100 pF eb (V = 0.5 V, f = 1.0 MHz) EB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2