X-On Electronics has gained recognition as a prominent supplier of NSVMMUN2114LT3G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NSVMMUN2114LT3G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NSVMMUN2114LT3G ON Semiconductor

NSVMMUN2114LT3G electronic component of ON Semiconductor
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Part No.NSVMMUN2114LT3G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SS SOT23 BR XSTR PNP
Datasheet: NSVMMUN2114LT3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2882 ea
Line Total: USD 0.29 
Availability - 18460
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
18460
Ship by Tue. 03 Dec to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.2882
10 : USD 0.2013
100 : USD 0.1265
1000 : USD 0.0572
2500 : USD 0.0506
10000 : USD 0.0396
20000 : USD 0.0385
50000 : USD 0.0363
100000 : USD 0.0341

   
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We are delighted to provide the NSVMMUN2114LT3G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSVMMUN2114LT3G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MUN2114, MMUN2114L, MUN5114, DTA114YE, DTA114YM3, NSBA114YF3 Digital Transistors (BRT) R1 = 10 k , R2 = 47 k www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT) contains a single transistor with a monolithic bias (INPUT) R2 network consisting of two resistors a series base resistor and a base emitter resistor. The BRT eliminates these individual PIN 2 components by integrating them into a single device. The use of a BRT EMITTER (GROUND) can reduce both system cost and board space. Features MARKING DIAGRAMS Simplifies Circuit Design Reduces Board Space SC59 XX M CASE 318D Reduces Component Count STYLE 1 S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable SOT23 These Devices are PbFree, Halogen Free/BFR Free and are RoHS XXX M CASE 318 Compliant STYLE 6 1 MAXIMUM RATINGS (T = 25C) A SC70/SOT323 Rating Symbol Max Unit XX M CASE 419 STYLE 3 CollectorBase Voltage V 50 Vdc CBO 1 CollectorEmitter Voltage V 50 Vdc CEO SC75 Collector Current Continuous I 100 mAdc C XX M CASE 463 STYLE 1 Input Forward Voltage V 40 Vdc IN(fwd) 1 Input Reverse Voltage V 6 Vdc IN(rev) SOT723 XX M Stresses exceeding those listed in the Maximum Ratings table may damage the CASE 631AA device. If any of these limits are exceeded, device functionality should not be STYLE 1 1 assumed, damage may occur and reliability may be affected. SOT1123 X M CASE 524AA 1 STYLE 1 XXX = Specific Device Code M = Date Code* =PbFree Package (Note: Microdot may be in either location) *Date Code orientation may vary depending up- on manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: October, 2016 Rev. 6 DTA114Y/DMUN2114, MMUN2114L, MUN5114, DTA114YE, DTA114YM3, NSBA114YF3 Table 1. ORDERING INFORMATION Device Part Marking Package Shipping MUN2114T1G, SMUN2114T1G* 6D SC59 3,000 / Tape & Reel MMUN2114LT1G, SMMUN2114LT1G* A6D SOT23 3,000 / Tape & Reel MMUN2114LT3G, NSVMMUN2114LT3G* A6D SOT23 10,000 / Tape & Reel MUN5114T1G, SMUN5114T1G* 6D SC70/SOT323 3,000 / Tape & Reel SMUN5114T3G 6D SC70/SOT323 10,000 / Tape & Reel DTA114YET1G, SDTA114YET1G* 6D SC75 3,000 / Tape & Reel DTA114YM3T5G, NSVDTA114YM3T5G* 6D SOT723 8,000 / Tape & Reel NSBA114YF3T5G K SOT1123 8,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 300 250 (1) SC75 and SC70/SOT323 Minimum Pad 200 (2) SC59 Minimum Pad (1) (2) (3) (4) (5) (3) SOT23 Minimum Pad 2 150 (4) SOT1123 100 mm , 1 oz. copper trace (5) SOT723 Minimum Pad 100 50 0 50 25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Figure 1. Derating Curve www.onsemi.com 2 P , POWER DISSIPATION (mW) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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