X-On Electronics has gained recognition as a prominent supplier of NSVMMUN2235LT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NSVMMUN2235LT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NSVMMUN2235LT1G ON Semiconductor

NSVMMUN2235LT1G electronic component of ON Semiconductor
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Part No.NSVMMUN2235LT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN DIGITAL TRANSIST
Datasheet: NSVMMUN2235LT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1246 ea
Line Total: USD 0.12 
Availability - 14414
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
14414
Ship by Thu. 05 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1246
10 : USD 0.0901
25 : USD 0.0893
100 : USD 0.0484
250 : USD 0.0478
500 : USD 0.0471
1000 : USD 0.0424

18
Ship by Thu. 12 Dec to Tue. 17 Dec
MOQ : 5
Multiples : 5
5 : USD 0.0938
50 : USD 0.0918
150 : USD 0.0905
500 : USD 0.0891

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Qualification
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NSVMMUN2235LT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSVMMUN2235LT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3 Digital Transistors (BRT) R1 = 2.2 k , R2 = 47 k www.onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) contains a single transistor with a monolithic bias BASE network consisting of two resistors a series base resistor and a (INPUT) R2 baseemitter resistor. The BRT eliminates these individual PIN 2 components by integrating them into a single device. The use of a BRT EMITTER can reduce both system cost and board space. (GROUND) Features MARKING DIAGRAMS Simplifies Circuit Design Reduces Board Space SC59 Reduces Component Count XX M CASE 318D S and NSV Prefix for Automotive and Other Applications Requiring STYLE 1 Unique Site and Control Change Requirements AECQ101 1 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS SOT23 XXX M Compliant CASE 318 STYLE 6 1 MAXIMUM RATINGS (T = 25C) A Rating Symbol Max Unit SC70/SOT323 XX M CASE 419 CollectorBase Voltage V 50 Vdc CBO STYLE 3 CollectorEmitter Voltage V 50 Vdc CEO 1 Collector Current Continuous I 100 mAdc C SC75 Input Forward Voltage V 12 Vdc CASE 463 XX M IN(fwd) STYLE 1 Input Reverse Voltage V 6 Vdc IN(rev) 1 Stresses exceeding those listed in the Maximum Ratings table may damage the SOT723 device. If any of these limits are exceeded, device functionality should not be XX M CASE 631AA assumed, damage may occur and reliability may be affected. STYLE 1 1 SOT1123 X M CASE 524AA 1 STYLE 1 XXX = Specific Device Code M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation may vary depending up- on manufacturing location. ORDERING INFORMATION See detailed ordering, marking, and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: March, 2017 Rev. 5 DTC123J/DMUN2235, MMUN2235L, MUN5235, DTC123JE, DTC123JM3, NSBC123JF3 Table 1. ORDERING INFORMATION Device Part Marking Package Shipping MUN2235T1G 6M SC59 3000 / Tape & Reel (PbFree) MMUN2235LT1G, NSVMMUN2235LT1G* AA2 SOT23 3000 / Tape & Reel (PbFree) MUN5235T1G, SMUN5235T1G* 8M SC70/SOT323 3000 / Tape & Reel (PbFree) DTC123JET1G, NSVDTC123JET1G* 8M SC75 3000 / Tape & Reel (PbFree) DTC123JM3T5G, NSVDTC123JM3T5G* 8M SOT723 8000 / Tape & Reel (PbFree) NSBC123JF3T5G V SOT1123 8000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable. 300 250 (1) SC75 and SC70/SOT323 Minimum Pad 200 (2) SC59 Minimum Pad (1) (2) (3) (4) (5) (3) SOT23 Minimum Pad 150 2 (4) SOT1123 100 mm , 1 oz. copper trace (5) SOT723 Minimum Pad 100 50 0 50 25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Figure 1. Derating Curve www.onsemi.com 2 P , POWER DISSIPATION (mW) D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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