X-On Electronics has gained recognition as a prominent supplier of NSVMSA1162GT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NSVMSA1162GT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NSVMSA1162GT1G ON Semiconductor

NSVMSA1162GT1G electronic component of ON Semiconductor
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Part No.NSVMSA1162GT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SS SC59 XSTR PNP 45V TR
Datasheet: NSVMSA1162GT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.429 ea
Line Total: USD 0.43 
Availability - 2909
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2909
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.429
10 : USD 0.4268
100 : USD 0.3817
1000 : USD 0.2013
3000 : USD 0.0704
9000 : USD 0.0594
24000 : USD 0.055
45000 : USD 0.0495
99000 : USD 0.0473

   
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We are delighted to provide the NSVMSA1162GT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSVMSA1162GT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MSA1162GT1G General Purpose Amplifier Transistors PNP Surface Mount Features MSA1162GT1G TYPICAL ELECTRICAL CHARACTERISTICS 200 1000 1.5 mA 2.0 mA 160 1.0 mA T = 100C A 120 25C 25C 0.5 mA 100 80 I = 0.2 mA B 40 T = 25C A V = 1.0 V CE 0 10 0 1 2 3 4 5 6 1 10 100 1000 V , COLLECTOREMITTER VOLTAGE (V) I , COLLECTOR CURRENT (mA) CE C Figure 1. Collector Saturation Region Figure 2. DC Current Gain 1000 1 I /I = 10 C B T = 100C A T = 100C A 25C 25C 25C 25C 100 0.1 V = 6.0 V CE 10 0.01 1 10 100 1000 1 10 100 1000 I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (mA) C C Figure 3. DC Current Gain Figure 4. V versus I CE(sat) C 10 10,000 COMMON EMITTER 25C V = 6 V CE T = 100C A 1000 25C 100 1 10 1 T = 25C A I /I = 10 C B 0.1 0.1 1 10 100 1000 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 I , COLLECTOR CURRENT (mA) V , BASEEMITTER VOLTAGE (V) C BE Figure 5. V versus I Figure 6. Base Emitter Voltage BE(sat) C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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