X-On Electronics has gained recognition as a prominent supplier of NSVMSD601-RT1G Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NSVMSD601-RT1G Bipolar Transistors - BJT are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NSVMSD601-RT1G ON Semiconductor

NSVMSD601-RT1G electronic component of ON Semiconductor
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See Product Specifications
Part No.NSVMSD601-RT1G
Manufacturer: ON Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT SS SC59 GP XSTR NPN PB FR
Datasheet: NSVMSD601-RT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6435 ea
Line Total: USD 0.64

Availability - 8729
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2889
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 0.3691
10 : USD 0.2564
100 : USD 0.1058
1000 : USD 0.0805
3000 : USD 0.0655
9000 : USD 0.0586
24000 : USD 0.0552
45000 : USD 0.0517
99000 : USD 0.0506

   
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We are delighted to provide the NSVMSD601-RT1G from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NSVMSD601-RT1G and other electronic components in the Bipolar Transistors - BJT category and beyond.

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MSD601-RT1, MSD601-ST1 Preferred Device NPN General Purpose Amplifier Transistors Surface Mount Features MSD601 RT1, MSD601ST1 ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Min Max Unit Collector Emitter Breakdown Voltage V 50 Vdc (BR)CEO (I = 2.0 mAdc, I = 0) C B Collector Base Breakdown Voltage V 60 Vdc (BR)CBO (I = 10 Adc, I = 0) C E Emitter Base Breakdown Voltage V 7.0 Vdc (BR)EBO (I = 10 Adc, I = 0) E C Collector Base Cutoff Current I 0.1 Adc CBO (V = 45 Vdc, I = 0) CB E Collector Emitter Cutoff Current I 100 nAdc CEO (V = 10 Vdc, I = 0) CE B DC Current Gain (Note 1) (V = 10 Vdc, I = 2.0 mAdc) CE C MSD601 RT1 h 210 340 FE1 MSD601 ST1 290 460 (V = 2.0 Vdc, I = 100 mAdc) h 90 CE C FE2 Collector Emitter Saturation Voltage V 0.5 Vdc CE(sat) (I = 100 mAdc, I = 10 mAdc) C B 1. Pulse Test: Pulse Width 300 s, D.C. 2%. ORDERING INFORMATION Device Package Shipping MSD 601RT1 SC 59 3000 / Tape & Reel MSD 601RT1G SC 59 3000 / Tape & Reel (Pb Free) MSD 601ST1 SC 59 3000 / Tape & Reel MSD 601ST1G SC 59 3000 / Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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