NSVS50030SB3, NSVS50031SB3 Bipolar Transistor ( )50 V, ( )3 A, Low V (sat), CE (PNP)NPN Single www.onsemi.com This device is bipolar junction transistor featuring high current, low saturation voltage, and high speed switching. ELECTRICAL CONNECTION Suitable for motor driver, relay driver, DCDC converter of automotive applications. AECQ101qualified and PPAP capable. 3 3 Features 1 1 Large Current Capacitance Low Collector to Emitter Saturation Voltage HighSpeed Switching 2 2 High Allowable Power Dissipation NSVS50030SB3 NSVS50031SB3 AECQ101Qualified and PPAP Capable PbFree, Halogen Free and RoHS Compliance Ultra Small Package Facilitates Miniaturization in End Products 3 (Mounting Height: 0.9 mm) 1 2 Typical Applications DC / DC Converter CPH3 Relay Drivers, Lamp Drivers, Motor Drivers CASE 318BA Flash Specifications MARKING DIAGRAMS ABSOLUTE MAXIMUM RATINGS at T = 25C A Parameter Symbol Value Unit XXXM Collector to Base Voltage V (50) 100 V CBO Collector to Emitter Voltage V (50) 100 V CES Collector to Emitter Voltage V ()50 V CEO Emitter to Base Voltage V ()6 V EBO XXX = HAE: NSVS50030SB3 = HCE: NSVS50031SB3 Collector Current I ()3 A C M = Single Digit Date Code Collector Current (Pulse) I ()6 A CP Base Current I ()600 mA B ORDERING INFORMATION Collector Dissipation (Note 1) P 1.1 W C See detailed ordering and shipping information on page 2 of Junction Temperature Tj 175 C this data sheet. Storage Temperature Tstg 55 to +175 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1. Surface mounted on ceramic substrate. (600 mm x 0.8 mm) Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: December, 2018 Rev. 1 NSVS50030SB3/DNSVS50030SB3, NSVS50031SB3 ORDERING INFORMATION Device Marking Package Shipping (Qty / Packing) NSVS50030SB3T1G HAE CPH3 3,000/ Tape & Reel (PbFree / Halogen Free) NSVS50031SBST1G HCE For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Value Min Typ Max Parameter Symbol Conditions Unit Collector Cutoff Current I V = ()40 V, I = 0 A ()1 A CBO CB E Emitter Cutoff Current I V = ()4 V, I = 0 A ()1 A EBO EB C DC Current Gain h V = ()2 V, 200 560 FE CE I = ()100 mA C GainBandwidth Product f V = ()10 V, (360) 380 MHz T CE I = ()500 mA C Output Capacitance Cob V = ()10 V, (24) 13 pF CB f = 1 MHz Collector to Emitter Saturation Voltage V (sat) I = ()1 A, (100) 80 (200) 120 mV CE C I = ()50 mA B I = ()2 A, (185) 140 (500) 210 mV C I = ()100 mA B Base to Emitter Saturation Voltage V (sat) I = ()2 A, ()0.88 ()1.2 V BE C I = ()100 mA B Collector to Base Breakdown Voltage V (50) 100 V I = ()10 A, I = 0 A (BR)CBO C E Collector to Emitter Breakdown Voltage V (50) 100 V I = ()100 A, (BR)CES C R = 0 BE Collector to Emitter Breakdown Voltage V I = ()1 mA, R = ()50 V (BR)CEO C BE Emitter to Base Breakdown Voltage V I = ()10 A, ()6 V (BR)EBO E I = 0 A C TurnOn Time t (30) 35 ns See Fig.1 on Storage Time t (230) 300 ns stg Fall Time t (15) 22 ns f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. I I B1 B1 PW=20 s PW=20 s DC 1% I DC 1% I B2 B2 OUTPUT OUTPUT INPUT INPUT R R B B V R V R R L R L + + + + 50 50 100 F 470 F 100 F 470 F V = 5 V V = 25 V V = 5 V V = 25 V BE CC BE CC 10I = 10I = I = 1 A 10I = 10I = I = 1 A B1 B2 C B1 B2 C NSVS50031SB3 NSVS50030SB3 Figure 1. Switching Time Test Circuit www.onsemi.com 2