Dual General Purpose Transistor NST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G www.onsemi.com The NST/NSV3904DXV6 device is a spinoff of our popular SOT23/SOT323 threeleaded device. It is designed for general purpose amplifier applications and is housed in the SOT 563 (3) (2) (1) sixleaded surface mount package. By putting two discrete devices in one package, this device is ideal for lowpower surface mount applications where board space is at a premium. Q Q 1 2 Features h , 100300 FE (4) (5) (6) Low V , 0.4 V CE(sat) NST/NSV3904DXV6 Simplifies Circuit Design Reduces Board Space Reduces Component Count MARKING AECQ101 Qualified and PPAP Capable NSVT3904DXV6T1G DIAGRAM NSV Prefix for Automotive and Other Applications Requiring SOT563 MA M Unique Site and Control Change Requirements CASE 463A 1 STYLE 1 1 MAXIMUM RATINGS MA = Device Code Rating Symbol Value Unit M = Date Code Collector Emitter Voltage V 40 Vdc CEO = PbFree Package (Note: Microdot may be in either location) Collector Base Voltage V 60 Vdc CBO Emitter Base Voltage V 6.0 Vdc EBO Collector Current Continuous I 200 mAdc C ORDERING INFORMATION Electrostatic Discharge HBM ESD >16000 V Device Package Shipping MM >2000 NST3904DXV6T1G SOT563 4000/Tape & Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be (PbFree) Reel assumed, damage may occur and reliability may be affected. NSVT3904DXV6T1G SOT563 4000/Tape & (PbFree) Reel NST3904DXV6T5G SOT563 8000/Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: April, 2020 Rev. 8 NST3904DXV6T1/DNST3904DXV6T1G, NSVT3904DXV6T1G, NST3904DXV6T5G THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation T = 25C P 357 mW A D Derate above 25C (Note 1) 2.9 mW/C Thermal Resistance Junction-to-Ambient (Note 1) R 350 C/W JA Characteristic (Both Junctions Heated) Symbol Max Unit Total Device Dissipation T = 25C P 500 mW A D Derate above 25C (Note 1) 4.0 mW/C Thermal Resistance, Junction-to-Ambient (Note 1) R 250 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. FR4 Minimum Pad www.onsemi.com 2