NST3906DXV6T1, NST3906DXV6T5 Dual General Purpose Transistor The NST3906DXV6T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general NST3906DXV6T1, NST3906DXV6T5 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector- Emitter Breakdown Voltage (Note 2) V -40 - Vdc (BR)CEO Collector- Base Breakdown Voltage V -40 - Vdc (BR)CBO Emitter- Base Breakdown Voltage V -5.0 - Vdc (BR)EBO Base Cutoff Current I - -50 nAdc BL Collector Cutoff Current I - -50 nAdc CEX ON CHARACTERISTICS (Note 2) DC Current Gain h - FE (I = -0.1 mAdc, V = -1.0 Vdc) 60 - C CE (I = -1.0 mAdc, V = -1.0 Vdc) 80 - C CE (I = -10 mAdc, V = -1.0 Vdc) 100 300 C CE (I = -50 mAdc, V = -1.0 Vdc) 60 - C CE (I = -100 mAdc, V = -1.0 Vdc) 30 - C CE Collector- Emitter Saturation Voltage V Vdc CE(sat) (I = -10 mAdc, I = -1.0 mAdc) - -0.25 C B (I = -50 mAdc, I = -5.0 mAdc) - -0.4 C B Base- Emitter Saturation Voltage V Vdc BE(sat) (I = -10 mAdc, I = -1.0 mAdc) -0.65 -0.85 C B (I = -50 mAdc, I = -5.0 mAdc) - -0.95 C B SMALL- SIGNAL CHARACTERISTICS Current- Gain - Bandwidth Product f 250 - MHz T Output Capacitance C - 4.5 pF obo Input Capacitance C - 10.0 pF ibo Input Impedance h 2.0 12 k ie (V = -10 Vdc, I = -1.0 mAdc, f = 1.0 kHz) CE C -4 Voltage Feedback Ratio h 0.1 10 X 10 re (V = -10 Vdc, I = -1.0 mAdc, f = 1.0 kHz) CE C Small- Signal Current Gain h 100 400 - fe (V = -10 Vdc, I = -1.0 mAdc, f = 1.0 kHz) CE C Output Admittance h 3.0 60 mhos oe (V = -10 Vdc, I = -1.0 mAdc, f = 1.0 kHz) CE C Noise Figure NF - 4.0 dB (V = -5.0 Vdc, I = -100 Adc, R = 1.0 k , f = 1.0 kHz) CE C S SWITCHING CHARACTERISTICS Delay Time (V = -3.0 Vdc, V = 0.5 Vdc) t - 35 CC BE d nsns Rise Time (I = -10 mAdc, I = -1.0 mAdc) t - 35 C B1 r Storage Time (V = -3.0 Vdc, I = -10 mAdc) t - 225 CC C s nsns Fall Time (I = I = -1.0 mAdc) t - 75 B1 B2 f 2. Pulse Test: Pulse Width 300 s Duty Cycle 2.0%.