NST3946DP6T5G Dual Complementary General Purpose Transistor The NST3946DP6T5G device is a spin off of our popular SOT23/SOT323/SOT563 threeleaded device. It is designed for general purpose amplifier applications and is housed in the SOT963 sixleaded surface mount package. By putting two discrete devices in one package, this device is ideal for lowpower surface mount www.onsemi.com applications where board space is at a premium. Features (3) (2) (1) h , 100300 FE Low V , 0.4 V CE(sat) Q Q 1 2 Reduces Board Space and Component Count NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 (4) (5) (6) Qualified and PPAP Capable NST3946DP6T5G* These Devices are PbFree, Halogen Free and are RoHS Compliant *Q1 PNP MAXIMUM RATINGS Q2 NPN Rating Symbol Value Unit Collector Emitter Voltage V 40 Vdc CEO Collector Base Voltage V 60 Vdc CBO Emitter Base Voltage V 6.0 Vdc EBO Collector Current Continuous I 200 mAdc C Electrostatic Discharge HBM ESD 2 SOT963 MM Class B CASE 527AD THERMAL CHARACTERISTICS Characteristic (Single Heated) Symbol Max Unit MARKING DIAGRAM Total Device Dissipation T = 25C P 240 mW A D Derate above 25C (Note 1) 1.9 mW/C M Thermal Resistance, Junction-to-Ambient R 520 C/W JA (Note 1) 1 Total Device Dissipation T = 25C P 280 mW A D L = Device Code Derate above 25C (Note 2) 2.2 mW/C (180 Clockwise Rotation) Thermal Resistance, Junction-to-Ambient R 446 C/W JA M = Date Code (Note 2) Characteristic (Dual Heated) (Note 3) Symbol Max Unit Total Device Dissipation T = 25C P 350 mW ORDERING INFORMATION A D Derate above 25C (Note 1) 2.8 mW/C Device Package Shipping Thermal Resistance, Junction-to-Ambient R 357 C/W JA NST3946DP6T5G SOT963 8000/Tape & Reel (Note 1) (PbFree) Total Device Dissipation T = 25C P 420 mW A D Derate above 25C (Note 2) 3.4 mW/C NSVT3946DP6T5G SOT963 8000/Tape & Reel (PbFree) Thermal Resistance, Junction-to-Ambient R 297 C/W JA (Note 2) For information on tape and reel specifications, Junction and Storage Temperature Range T , T 55 to C J stg including part orientation and tape sizes, please +150 refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 1. FR4 100 mm , 1 oz. copper traces, still air. 2 2. FR4 500 mm , 1 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: June, 2017 Rev. 3 NST3946DP6/D LNST3946DP6T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (Note 4) V Vdc (BR)CEO (I = 1.0 mAdc, I = 0) (NPN) 40 C B (I = 1.0 mAdc, I = 0) (PNP) 40 C B Collector Base Breakdown Voltage V Vdc (BR)CBO (I = 10 Adc, I = 0) (NPN) 60 C E (I = 10 Adc, I = 0) (PNP) 40 C E Emitter Base Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) (NPN) 6.0 E C (I = 10 Adc, I = 0) (PNP) 5.0 E C Collector Cutoff Current I nAdc CEX (V = 30 Vdc, V = 3.0 Vdc) (NPN) 50 CE EB (V = 30 Vdc, V = 3.0 Vdc) (PNP) 50 CE EB ON CHARACTERISTICS (Note 4) DC Current Gain h FE (I = 0.1 mAdc, V = 1.0 Vdc) (NPN) 40 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 70 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE (I = 0.1 mAdc, V = 1.0 Vdc) (PNP) 60 C CE (I = 1.0 mAdc, V = 1.0 Vdc) 80 C CE (I = 10 mAdc, V = 1.0 Vdc) 100 300 C CE (I = 50 mAdc, V = 1.0 Vdc) 60 C CE (I = 100 mAdc, V = 1.0 Vdc) 30 C CE Collector Emitter Saturation Voltage V Vdc CE(sat) (I = 10 mAdc, I = 1.0 mAdc) (NPN) 0.2 C B (I = 50 mAdc, I = 5.0 mAdc) 0.3 C B (I = 10 mAdc, I = 1.0 mAdc) (PNP) 0.25 C B (I = 50 mAdc, I = 5.0 mAdc) 0.4 C B Base Emitter Saturation Voltage V Vdc BE(sat) (I = 10 mAdc, I = 1.0 mAdc) (NPN) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B (I = 10 mAdc, I = 1.0 mAdc) (PNP) 0.65 0.85 C B (I = 50 mAdc, I = 5.0 mAdc) 0.95 C B 4. Pulse Test: Pulse Width 300 s Duty Cycle 2.0%. www.onsemi.com 2