NST489AMT1G, NSVT489AMT1G High Current Surface Mount NPN Silicon Low V CE(sat) Switching Transistor for www.onsemi.com Load Management in 30 VOLTS, 3.0 AMPS Portable Applications NPN TRANSISTOR Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable TSOP6 CASE 318G These Devices are PbFree, Halogen Free/BFR Free and are RoHS STYLE 6 Compliant COLLECTOR 1, 2, 5, 6 MAXIMUM RATINGS (T = 25C) A Rating Symbol Max Unit 3 Collector-Emitter Voltage V 30 V CEO BASE Collector-Base Voltage V 50 V CBO 4 Emitter-Base Voltage V 5.0 V EBO EMITTER Collector Current Continuous I 2.0 A C Collector Current Peak I 3.0 A DEVICE MARKING CM THERMAL CHARACTERISTICS Characteristic Symbol Max Unit N2 M Total Device Dissipation P (Note 1) D T = 25C 535 mW A Derate above 25C 4.3 mW/C Thermal Resistance, R (Note 1) C/W JA N2 = Specific Device Code JunctiontoAmbient 234 M = Date Code* Total Device Dissipation P (Note 2) = PbFree Package D T = 25C 1.180 W A (Note: Microdot may be in either location) Derate above 25C 9.4 mW/C *Date Code orientation may vary depending upon Thermal Resistance, R (Note 2) C/W JA manufacturing location. JunctiontoAmbient 106 Thermal Resistance, R (Note 1) 110 C/W JL ORDERINGORDERING INFORMA INFORMATIONTION JunctiontoLead 1 R (Note 2) 50 C/W JL Device Package Shipping Total Device Dissipation P W Dsingle (Single Pulse < 10 s) (Notes 2 and 3) 1.75 NST489AMT1G TSOP6 3,000 / Junction and Storage T , T 55 to +150 C (PbFree) Tape & Reel J stg Temperature Range NSVT489AMT1G TSOP6 3,000 / Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) Tape & Reel device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. For information on tape and reel specifications, 2 1. FR4 with 1 oz and 3.9 mm of copper area. including part orientation and tape sizes, please 2 2. FR4 with 1 oz and 645 mm of copper area. refer to our Tape and Reel Packaging Specifications 3. Refer to Figure 8. Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2011 1 Publication Order Number: January, 2018 Rev. 9 NST489AMT1/DNST489AMT1G, NSVT489AMT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (I = 10 mA, I = 0) V 30 V C B (BR)CEO CollectorBase Breakdown Voltage (I = 0.1 mA, I = 0) V 50 V C E (BR)CBO EmitterBase Breakdown Voltage (I = 0.1 mA, I = 0) V 5.0 V E C (BR)EBO Collector Cutoff Current (V = 30 V, I = 0) I 0.1 A CB E CBO CollectorEmitter Cutoff Current (V = 30 V) I 0.1 A CES CES Emitter Cutoff Current (V = 4.0 V) I 0.1 A EB EBO ON CHARACTERISTICS DC Current Gain (Note 4) (I = 1.0 mA, V = 5.0 V) h 300 C CE FE (I = 0.5 A, V = 5.0 V) 300 500 900 C CE (I = 1.0 A, V = 5.0 V) 200 C CE CollectorEmitter Saturation Voltage (Note 4) (I = 1.0 A, I = 100 mA) V 0.10 0.200 V C B CE(sat) (I = 0.5 A, I = 50 mA) 0.06 0.125 C B (I = 0.1 A, I = 1.0 mA) 0.05 0.075 C B BaseEmitter Saturation Voltage (Note 4) (I = 1.0 A, I = 0.1 A) V 1.1 V C B BE(sat) BaseEmitter Turnon Voltage (Note 4) (I = 1.0 A, V = 2.0 V) V 1.1 V C CE BE(on) Cutoff Frequency (I = 100 mA, V = 5.0 V, f = 100 MHz f 200 300 MHz C CE T Output Capacitance (f = 1.0 MHz) C 15 pF obo 4. Pulsed Condition: Pulse Width 300 sec, Duty Cycle 2%. 1.0 1.0 0.9 0.9 I = 2 A C 0.8 0.8 0.7 0.7 I = 1 A C 0.6 0.6 0.5 0.5 I /I = 100 c b 0.4 0.4 0.3 0.3 I /I = 10 c b I = 500 mA 0.2 0.2 C 0.1 0.1 I = 100 mA C 0 0 0.001 0.01 0.1 0.2 0.001 0.01 0.1 1 2 I (A) I (A) b c Figure 1. V versus I Figure 2. V versus I CE (sat) b CE (sat) c 800 1.2 V = 5 V CE V = 5 V CE 700 +125C 1.0 600 +25C 55C 0.8 500 +25C 400 0.6 55C 300 +125C 0.4 200 0.2 100 0 0 0.001 0.01 0.1 1 2 0.001 0.01 0.1 1 2 I (A) I (A) c c Figure 3. h versus I Figure 4. V versus I FE c BE(on) c www.onsemi.com 2 h FE V (V) CE(sat) V (V) BE(on) V (V) CE(sat)