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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.NZT753 NZT753 PNP Current Driver Transistor 4 This device is designed for power amplifier, regulator and switching circuits where speed is important. Sourced from Process 5P. 3 2 1 SOT-223 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings* T =25C unless otherwise noted A Symbol Parameter Value Units V Collector-Emitter Voltage - 100 V CEO V Collector-Base Voltage - 120 V CBO V Emitter-Base Voltage - 5.0 V EBO I Collector Current - Continuous - 4.0 A C T , T Operating and Storage Junction Temperature Range - 55 ~ +150 C J STG *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T =25C unless otherwise noted A Symbol Parameter Test Conditions Min. Max. Units Off Characteristics BV Collector-Emitter Breakdown Voltage I = -10mA, I = 0 -100 V CEO C B BV Collector-Base Breakdown Voltage I = -100 A, I = 0 -120 V CBO C E BV Emitter-Base Breakdown Voltage I = -100 A, I = 0 -5.0 V EBO E C I Collector-Base Cutoff Current V = -100V, I = 0 -0.1 A CBO CB E T = 100C -10 A A I Emitter-Base Cutoff Current V = -4V, I = 0 -0.1 A EBO EB C On Characteristics * h DC Current Gain V = -2.0V, I = -50mA 70 FE CE C V = -2.0V, I = -500mA 100 300 CE C V = -2.0V, I = -1.0A 55 CE C V (sat) Collector-Emitter Saturation Voltage I = -1.0A, I = -50mA -0.3 V CE C C V (sat) Base-Emitter Saturation Voltage I = -1.0A, I = -100mA -1.25 V BE C B V (on) Base-Emitter On Voltage V = -2.0V, I = -1.0A, -1.0 V BE CE C Small Signal Characteristics f Transition Frequency V = -5V, I = -100mA, f = 100MHz 75 MHz T CE C *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Thermal Characteristics * T =25C unless otherwise noted A Symbol Parameter Max. Units P Total Device Dissipation 1.2 W D Derate above 25C 9.7 mW/C R Thermal Resistance, Junction to Ambient 103 C/W JA 2 * Device mounted on FR-4 PCB 36mm 18mm 1.5mm mounting pad for the collector lead min 6cm . 2003 Fairchild Semiconductor Corporation Rev. A, April 2003