Ordering number : ENA1346A PCP1103 Bipolar Transistor PCP1103 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Base Current I --300 mA B 2 When mounted on ceramic substrate (450mm 0.8mm) 1.3 W Collector Dissipation P C Tc=25C 3.5 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V = --30V, I =0A --0.1 A CBO CB E Emitter Cutoff Current I V = --4V, I =0A --0.1 A EBO EB C DC Current Gain h V = --2V, I = --100mA 200 560 FE CE C Gain-Bandwidth Product f V = --10V, I = --300mA 450 MHz T CE C Output Capacitance Cob V = --10V, f=1MHz 9 pF CB Collector to Emitter Saturation Voltage V (sat) I = --0.75A, I = --15mA --250 --375 mV CE C B Base to Emitter Saturation Voltage V (sat) I = --0.75A, I = --15mA --0.85 --1.2 V BE C B Collector to Base Breakdown Voltage V I = --10A, I =0A --30 V (BR)CBO C E Collector to Emitter Breakdown Voltage V I = --1mA, R = --30 V (BR)CEO C BE Emitter to Base Breakdown Voltage V I = --10 A, I =0A --5 V (BR)EBO E C Turn-On Time t 35 ns on Storage Time t See speci ed Test Circuit. 115 ns stg Fall Time t 30 ns f Switching Time Test Circuit I B1 PW=50s D.C.1% OUTPUT I B2 INPUT R B R L 50 + 820F V = --12V CC I =20I = --20I = --0.75A C B1 B2 Ordering Information Device Package Shipping memo PCP1103-TD-H PCP 1,000pcs./reel Pb Free and Halogem Free I -- V I -- V C CE C BE --2.0 --1.6 V = --2V CE --1.8 --1.4 --1.6 --1.2 --1.4 --1.0 --1.2 --1.0 --0.8 --0.8 --0.6 --0.6 --0.4 --0.4 --0.2 --0.2 I =0mA B 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Collector to Emitter Voltage, V -- V IT14106 Base to Emitter Voltage, V -- V IT14107 CE BE No.A1346-2/5 --4mA --2mA --6mA --10mA --8mA --20mA --50mA --40mA --30mA Ta=75C 25C --25C Collector Current, I -- A C Collector Current, I -- A C