Ordering number : ENA1836B PCP1208 Bipolar Transistor PCP1208 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current I V =100V, I =0A 1 A CBO CB E Emitter Cutoff Current I V =4V, I =0A 1 A EBO EB C DC Current Gain h V =5V, I =100mA 200 560 FE CE C Gain-Bandwidth Product f V =10V, I =100mA 120 MHz T CE C Output Capacitance Cob V =10V, f=1MHz 9 pF CB Collector-to-Emitter Saturation Voltage V (sat) I =0.35A, I =35mA 115 200 mV CE C B Base-to-Emitter Saturation Voltage V (sat) I =0.35A, I =35mA 0.82 1.2 V BE C B Collector-to-Base Breakdown Voltage V I =10A, I =0A 220 V (BR)CBO C E Collector-to-Emitter Breakdown Voltage V I =1mA, R = 200 V (BR)CEO C BE Emitter-to-Base Breakdown Voltage V I =10A, I =0A 8 V (BR)EBO E C Turn-On Time t 50 ns on Storage Time t See speci ed Test Circuit. 2 s stg Fall Time t 70 ns f Switching Time Test Circuit I B1 PW=50s D.C. 1% OUTPUT I B2 INPUT R B R L 50 + 820F V =100V CC I =10I = --10I =0.3A C B1 B2 No.1836-2/7