PN2222A / MMBT2222A / PZT2222A NPN General Purpose Amplifier
August 2010
PN2222A / MMBT2222A / PZT2222A
NPN General Purpose Amplifier
Features
This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.
Sourced from process 19.
PN2222A MMBT2222A PZT2222A
C
C
E
E
C
B
TO-92 SOT-23 SOT-223
B
Mark:1P
EBC
Absolute Maximum Ratings * T = 25C unless otherwise noted
a
Symbol Parameter Value Units
V Collector-Emitter Voltage 40 V
CEO
V Collector-Base Voltage 75 V
CBO
V Emitter-Base Voltage 6.0 V
EBO
I Collector Current 1.0 A
C
T Operating and Storage Junction Temperature Range - 55 ~ 150 C
STG
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics T = 25C unless otherwise noted
a
Max.
Symbol Parameter Units
PN2222A *MMBT2222A **PZT2222A
Total Device Dissipation 625 350 1,000 mW
P
D
Derate above 25 C 5.0 2.8 8.0 mW/ C
R Thermal Resistance, Junction to Case 83.3 C/W
JC
R Thermal Resistance, Junction to Ambient 200 357 125 C/W
JA
* Device mounted on FR-4 PCB 1.6 1.6 0.06.
2
** Device mounted on FR-4 PCB 36mm 18mm 1.5mm; mounting pad for the collector lead min. 6cm .
2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN2222A / MMBT2222A / PZT2222A Rev. A3 1 PN2222A / MMBT2222A / PZT2222A NPN General Purpose Amplifier
Electrical Characteristics T = 25C unless otherwise noted
a
Symbol
Parameter Test Condition Min. Max. Units
Off Characteristics
BV Collector-Emitter Breakdown Voltage * I = 10mA, I = 0 40 V
(BR)CEO C B
BV Collector-Base Breakdown Voltage I = 10 A, I = 0 75 V
(BR)CBO C E
BV Emitter-Base Breakdown Voltage I = 10A, I = 0 6.0 V
(BR)EBO E C
I Collector Cutoff Current V = 60V, V = 3.0V 10 nA
CEX CE EB(off)
I Collector Cutoff Current V = 60V, I = 0 0.01 A
CBO CB E
V = 60V, I = 0, T = 125 C 10 A
CB E a
I Emitter Cutoff Current V = 3.0V, I = 0 10 nA
EBO EB C
I Base Cutoff Current V = 60V, V = 3.0V 20 nA
BL CE EB(off)
On Characteristics
DC Current Gain I = 0.1mA, V = 10V 35
h
FE C CE
I = 1.0mA, V = 10V 50
C CE
I = 10mA, V = 10V 75
C CE
I = 10mA, V = 10V, T = -55C
35
C CE a
I = 150mA, V = 10V * 100 300
C CE
I = 150mA, V = 1V * 50
C CE
I = 500mA, V = 10V *
40
C CE
V Collector-Emitter Saturation Voltage * I = 150mA, I = 15mA 0.3 V
CE(sat) C B
I = 500mA, I = 50mA 1.0 V
C B
V Base-Emitter Saturation Voltage * I = 150mA, I = 15mA 0.6 1.2 V
BE(sat) C B
I = 500mA, I = 50mA 2.0 V
C B
Small Signal Characteristics
f Current Gain Bandwidth Product I = 20mA, V = 20V, f = 100MHz 300 MHz
T C CE
C Output Capacitance V = 10V, I = 0, f = 1MHz 8.0 pF
obo CB E
C Input Capacitance V = 0.5V, I = 0, f = 1MHz 25 pF
ibo EB C
rbC Collector Base Time Constant I = 20mA, V = 20V, f = 31.8MHz 150 pS
c C CB
NF Noise Figure I = 100A, V = 10V, 4.0 dB
C CE
R = 1.0K, f = 1.0KHz
S
Re(h ) Real Part of Common-Emitter I = 20mA, V = 20V, f = 300MHz 60
ie C CE
High Frequency Input Impedance
Switching Characteristics
t Delay Time V = 30V, V = 0.5V, 10 ns
d CC EB(off)
I = 150mA, I = 15mA
C B1
t Rise Time 25 ns
r
t Storage Time V = 30V, I = 150mA, 225 ns
s CC C
I = I = 15mA
B1 B2
t Fall Time 60 ns
f
* Pulse Test: Pulse Width 300s, Duty Cycle 2.0%
2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
PN2222A / MMBT2222A / PZT2222A Rev. A3 2