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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PN3565
Discrete POWER & Signal
Technologies
PN3565
TO-92
C
B
E
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced from
Process 10. See PN100 for characteristics.
Absolute Maximum Ratings* TA = 25C unless otherwise noted
Symbol Parameter Value Units
V Collector-Emitter Voltage 25 V
CEO
VCBO Collector-Base Voltage 30 V
V Emitter-Base Voltage 6.0 V
EBO
I Collector Current - Continuous 500 mA
C
Operating and Storage Junction Temperature Range -55 to +150 C
T , T
J stg
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25C unless otherwise noted
Symbol Characteristic Max Units
PN3565
P Total Device Dissipation 625 mW
D
Derate above 25 C 5.0 mW/ C
R Thermal Resistance, Junction to Case 83.3 C/W
JC
R Thermal Resistance, Junction to Ambient 200 C/W
JA
1997 Fairchild Semiconductor Corporation