PZT651 NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT223 package which is designed for medium power surface www.onsemi.com mount applications. SOT223 package ensures level mounting, resulting in improved SOT223 PACKAGE HIGH CURRENT thermal conduction, and allows visual inspection of soldered joints. NPN SILICON TRANSISTOR The formed leads absorb thermal stress during soldering, eliminating SURFACE MOUNT the possibility of damage to the die. Features 4 High Current 1 2 3 The SOT223 Package can be Soldered Using Wave or Reflow SOT223 PNP Complement is PZT751T1G CASE 318E04 STYLE 1 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and COLLECTOR 2, 4 PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant BASE 1 MAXIMUM RATINGS (T = 25C unless otherwise noted) C EMITTER 3 Rating Symbol Value Unit CollectorEmitter Voltage V 60 Vdc CEO MARKING DIAGRAM CollectorBase Voltage V 80 Vdc CBO EmitterBase Voltage V 5.0 Vdc EBO AYW Collector Current I 2.0 Adc 651 C Total Power Dissipation P W D 1 T = 25C (Note 1) 0.8 A Derate above 25C 6.4 mW/C A = Assembly Location Storage Temperature Range T 65 to 150 C stg Y = Year Junction Temperature T 150 C WW = Work Week J = PbFree Package THERMAL CHARACTERISTICS (Note: Microdot may be in either location) Characteristic Symbol Max Unit Thermal Resistance from R 156 C/W ORDERING INFORMATION JA JunctiontoAmbient in Free Air Device Package Shipping Maximum Temperature for Soldering T 260 C L PZT651T1G SOT223 1,000 / Tape & Reel Purposes (PbFree) Time in Solder Bath 10 Sec SPZT651T1G SOT223 1,000 / Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. For information on tape and reel specifications, 1. Device mounted on a FR4 glass epoxy printed circuit board using minimum including part orientation and tape sizes, please recommended footprint. refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: December, 2016 Rev. 10 PZT651T1/DPZT651 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristics Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage V Vdc (BR)CEO (I = 10 mAdc, I = 0) 60 C B CollectorEmitter Breakdown Voltage V Vdc (BR)CBO (I = 100 Adc, I = 0) 80 C E EmitterBase Breakdown Voltage V Vdc (BR)EBO (I = 10 Adc, I = 0) 5.0 E C BaseEmitter Cutoff Current I Adc EBO (V = 4.0 Vdc) 0.1 EB CollectorBase Cutoff Current I nAdc CBO (V = 80 Vdc, I = 0) 100 CB E ON CHARACTERISTICS (Note 2) DC Current Gain h FE (I = 50 mAdc, V = 2.0 Vdc) 75 C CE (I = 500 mAdc, V = 2.0 Vdc) 75 C CE (I = 1.0 Adc, V = 2.0 Vdc) 75 C CE (I = 2.0 Adc, V = 2.0 Vdc) 40 C CE CollectorEmitter Saturation Voltages V Vdc CE(sat) (I = 2.0 Adc, I = 200 mAdc) 0.5 C B (I = 1.0 Adc, I = 100 mAdc) 0.3 C B BaseEmitter Voltages V Vdc BE(on) (I = 1.0 Adc, V = 2.0 Vdc) 1.0 C CE BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 1.0 Adc, I = 100 mAdc) 1.2 C B CurrentGain Bandwidth f MHz T (I = 50 mAdc, V = 5.0 Vdc, f = 100 MHz) 75 C CE Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 s, Duty Cycle = 2.0% www.onsemi.com 2