ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. RHRD660, RHRD660S Data Sheet January 2002 Features 6A, 600V Hyperfast Diodes The RHRD660 and RHRD660S are hyperfast diodes with Hyperfast with Soft Recovery <30ns soft recovery characteristics (t < 30ns). They have half the o rr C Operating Temperature 175 recovery time of ultrafast diodes and are silicon nitride Reverse Voltage Up To 600V passivated ion-implanted epitaxial planar construction. Avalanche Energy Rated These devices are intended for use as freewheeling/ Planar Construction clamping diodes and rectiers in a variety of switching power supplies and other power switching applications. Their low Applications stored charge and hyperfast soft recovery minimize ringing Switching Power Supplies and electrical noise in many power switching circuits reducing power loss in the switching transistors. Power Switching Circuits General Purpose Formerly developmental type TA49057. Packaging Ordering Information JEDEC STYLE TO-251 PART NUMBER PACKAGE BRAND ANODE RHRD660 TO-251 RHR660 CATHODE RHRD660S TO-252 RHR660 CATHODE NOTE: When ordering, use the entire part number. Add the sufx 9A (FLANGE) to obtain the TO-252 variant in tape and reel, e.g. RHRD660S9A. Symbol JEDEC STYLE TO-252 K CATHODE (FLANGE) CATHODE A ANODE o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specied C RHRD660, RHRD660S UNITS Peak Repetitive Reverse Voltage . V 600 V RRM Working Peak Reverse Voltage V 600 V RWM DC Blocking Voltage .V 600 V R Average Rectied Forward Current . I 6A F(AV) o (T = 152 C) C Repetitive Peak Surge Current . I 12 A FRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . I 60 A FSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation .P 50 W D Avalanche Energy (See Figures 10 and 11) . E 10 mJ AVL o Operating and Storage Temperature T , T -65 to 175 C STG J Maximum Lead Temperature for Soldering o (Leads at 0.063 in. (1.6mm) from case for 10s) . T 300 C L o Package Body for 10s, see Tech Brief 334 .T 260 C PKG 2002 Fairchild Semiconductor Corporation RHRD660, RHRD660S Rev. B