X-On Electronics has gained recognition as a prominent supplier of RHRD660S9A-F085 Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. RHRD660S9A-F085 Diodes - General Purpose, Power, Switching are a product manufactured by ON Semiconductor. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

RHRD660S9A-F085 ON Semiconductor

RHRD660S9A-F085 electronic component of ON Semiconductor
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See Product Specifications
Part No.RHRD660S9A-F085
Manufacturer: ON Semiconductor
Category: Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching 6A 600V Hyperfast
Datasheet: RHRD660S9A-F085 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.5117 ea
Line Total: USD 1279.25

Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Mon. 29 Jul to Fri. 02 Aug
MOQ : 2500
Multiples : 2500
2500 : USD 0.5117
5000 : USD 0.4703
10000 : USD 0.4664

   
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Product Category
Product
Mounting Style
Configuration
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Pcb Changed
Package Length
Package Height
Package Width
Tab
Lead Shape
Maximum Dc Reverse Voltage V
Peak Reverse Repetitive Voltage V
Maximum Continuous Forward Current A
Peak Non-Repetitive Surge Current A
Peak Forward Voltage V
Peak Reverse Current Ua
Maximum Power Dissipation Mw
Peak Reverse Recovery Time Ns
Automotive
Aec Qualified Number
Pin Count
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We are delighted to provide the RHRD660S9A-F085 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RHRD660S9A-F085 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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RHRD660S9A-F085 Data Sheet May 2013 6A, 600V Hyperfast Diodes Features The RHRD660S9A-F085 is hyperfast diodes with Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <30ns soft recovery characteristics (t < 30ns). It has half the rr o Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175 C recovery time of ultrafast diodes and are silicon nitride Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . . . 600V passivated ion-implanted epitaxial planar construction. Avalanche Energy Rated This device is intended for use as freewheeling/ Planar Construction clamping diodes and rectiers in a variety of switching power Qualified to AEC Q101 supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing RoHS Compliant and electrical noise in many power switching circuits Applications reducing power loss in the switching transistors. Switching Power Supplies Formerly developmental type TA49057. Power Switching Circuits General Purpose Ordering Information PART NUMBER PACKAGE BRAND RHRD660S9A-F085 TO-252 RHR660 Symbol Packaging JEDEC STYLE TO-252 K CATHODE (FLANGE) CATHODE A ANODE o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specied C RHRD660S9A-F085 UNITS Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V 600 V RRM Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V 600 V RWM DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V 600 V R Average Rectied Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 6 A F(AV) o (T = 152 C) C Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 12 A FRM (Square Wave, 20kHz) Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 60 A FSM (Halfwave, 1 Phase, 60Hz) Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P 50 W D Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E 10 mJ AVL o Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T -55 to 175 C STG J Maximum Lead Temperature for Soldering o (Leads at 0.063 in. (1.6mm) from case for 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T 300 C L o Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T 260 C PKG Publication Order Number: 2011Semiconductor Components Industries, LLC. RHRD660S 9A-F085/D September-2017, Rev 3RHRD660S9A-F085 o Electrical Specications T = 25 C, Unless Otherwise Specied C SYMBOL TEST CONDITION MIN TYP MAX UNITS V I = 6A - - 2.1 V F F o I = 6A, T = 150 C - - 1.7 V F C I V = 600V - - 100 A R R o V = 600V, T = 150 C - - 500 A R C t I = 1A, dI /dt = 200A/s- - 30 ns rr F F I = 6A, dI /dt = 200A/s- - 35 ns F F t I = 6A, dI /dt = 200A/ s - 16 - ns a F F t I = 6A, dI /dt = 200A/ s - 8.5 - ns b F F Q I = 6A, dI /dt = 200A/ s - 45 - nC RR F F C V = 10V, I = 0A - 20 - pF J R F o R -- 3 C/W JC DEFINITIONS V = Instantaneous forward voltage (pw = 300 s, D = 2%). F I = Instantaneous reverse current. R t = Reverse recovery time (See Figure 9), summation of t + t . rr a b t = Time to reach peak reverse current (See Figure 9). a t = Time from peak I to projected zero crossing of I based on a straight line from peak I through 25% of I (See Figure 9). b RM RM RM RM Q = Reverse recovery charge. RR C = Junction capacitance. J R = Thermal resistance junction to case. JC pw = Pulse width. D = Duty cycle. Typical Performance Curves 30 1000 o 175 C 100 10 o 100 C 10 1 o o o 25 C 175 C 100 C 0.1 o 1 25 C 0.5 0.01 0 0.5121.5 2.5 3 0 100 200 300 400 500 600 V , FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (V) F R FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE www.onsemi.com 2 I , FORWARD CURRENT (A) F I , REVERSE CURRENT ( A) R

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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