2SA1774G, S2SA1774G PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC75/SOT416/SC90 package which is designed for low power surface mount www.onsemi.com applications, where board space is at a premium. Features Reduces Board Space High h , 210 460 (typical) FE SC75 Low V , < 0.5 V CE(sat) CASE 463 Available in 8 mm, 7inch/3000 Unit Tape and Reel STYLE 1 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and COLLECTOR PPAP Capable 3 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (T = 25C) A 1 2 BASE EMITTER Rating Symbol Value Unit Collector Emitter Voltage V 60 Vdc (BR)CBO MARKING DIAGRAM Collector Base Voltage V 50 Vdc (BR)CEO Emitter Base Voltage V 6.0 Vdc (BR)EBO F9 M Collector Current Continuous I 100 mAdc C THERMAL CHARACTERISTICS 1 Characteristic Symbol Max Unit F9 = Device Code Power Dissipation (Note 1) P 150 mW D M = Date Code* = PbFree Package Junction Temperature T 150 C J Storage Temperature Range T 55 ~ +150 C (Note: Microdot may be in either location) stg Stresses exceeding those listed in the Maximum Ratings table may damage the *Date Code orientation may vary depending device. If any of these limits are exceeded, device functionality should not be upon manufacturing location. assumed, damage may occur and reliability may be affected. 1. Device mounted on a FR 4 glass epoxy printed circuit board using the minimum recommended footprint. ORDERING INFORMATION Device Package Shipping 2SA1774G SC75 3,000/Tape & Reel (PbFree) S2SA1774G SC75 3,000/Tape & Reel (PbFree) 2SA1774T1G SC75 3,000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please *For additional information on our PbFree strategy and soldering details, please refer to our Tape and Reel Packaging Specifications download the ON Semiconductor Soldering and Mounting Techniques Reference Brochure, BRD8011/D. Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 1 Publication Order Number: February, 2019 Rev. 10 2SA1774/D2SA1774G, S2SA1774G ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Min Typ Max Unit CollectorBase Breakdown Voltage V V (BR)CBO (I = 50 Adc, I = 0) 60 C E CollectorEmitter Breakdown Voltage V V (BR)CEO (I = 1.0 mAdc, I = 0) 50 C B EmitterBase Breakdown Voltage V V (BR)EBO (I = 50 Adc, I = 0) 6.0 E E CollectorBase Cutoff Current I A CBO (V = 30 Vdc, I = 0) 0.5 CB E EmitterBase Cutoff Current I A EBO (V = 5.0 Vdc, I = 0) 0.5 EB B CollectorEmitter Saturation Voltage (Note 2) V V CE(sat) (I = 50 mAdc, I = 5.0 mAdc) 0.5 C B DC Current Gain (Note 2) h FE (V = 6.0 Vdc, I = 1.0 mAdc) 120 560 CE C Transition Frequency f MHz T (V = 12 Vdc, I = 2.0 mAdc, f = 30 MHz) 140 CE C Output Capacitance C pF OB (V = 12 Vdc, I = 0 Adc, f = 1 MHz) 3.5 CB E 2. Pulse Test: Pulse Width 300 s, D.C. 2%. www.onsemi.com 2