S2SC4617G ON Semiconductor

2SC4617G, S2SC4617G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SC75/SOT-416 package 2SC4617G, S2SC4617G ELECTRICAL CHARACTERISTICS (T = 25C) A Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (I = 50 Adc, I = 0) V 50 Vdc C E (BR)CBO Collector-Emitter Breakdown Voltage (I = 1.0 mAdc, I = 0) V 50 Vdc C B (BR)CEO Emitter-Base Breakdown Voltage (I = 50 Adc, I = 0) V 5.0 Vdc E E (BR)EBO Collector-Base Cutoff Current (V = 30 Vdc, I = 0) I 0.5 A CB E CBO Emitter-Base Cutoff Current (V = 4.0 Vdc, I = 0) I 0.5 A EB B EBO Collector-Emitter Saturation Voltage (Note 2) V Vdc CE(sat) (I = 60 mAdc, I = 5.0 mAdc) 0.4 C B DC Current Gain (Note 2) h FE (V = 6.0 Vdc, I = 1.0 mAdc) 120 560 CE C Transition Frequency (V = 12 Vdc, I = 2.0 mAdc, f = 30 MHz) f 180 MHz CE C T Output Capacitance (V = 12 Vdc, I = 0 Adc, f = 1 MHz) C 2.0 pF CB C OB Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 s, D.C. 2%.