SBAT54AWT1G ON Semiconductor

BAT54AW Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. www.onsemi.com Features 30 VOLT Extremely Fast Switching Speed Low Forward Voltage 0.35 V (Typ) I = 10 mAdc SCHOTTKY BARRIER F S Prefix for Automotive and Other Applications Requiring Unique DETECTOR AND SWITCHING Site and Control Change Requirements AECQ101 Qualified and DIODES PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (T = 125C unless otherwise noted) J SOT323 Rating Symbol Value Unit CASE 419 STYLE 4 Reverse Voltage V 30 V R Forward Power Dissipation P F CATHODE T = 25C 200 mW ANODE A 1 Derate above 25C 1.6 mW/C 3 2 Forward Current (DC) I 200 Max mA CATHODE F NonRepetitive Peak Forward Current I mA FSM t < 10 msec 600 MARKING DIAGRAM p Repetitive Peak Forward Current I mA FRM Pulse Wave = 1 sec, 300 B7M Duty Cycle = 66% Junction Temperature T 55 to 150 C J 1 Storage Temperature Range T 55 to +150 C stg B7 = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the M = Date Code* device. If any of these limits are exceeded, device functionality should not be = PbFree Package assumed, damage may occur and reliability may be affected. (Note: Microdot may be in either location) *Date Code orientation may vary depending up- on manufacturing location. ORDERING INFORMATION Device Package Shipping BAT54AWT1G SOT323 3,000/Tape & Reel (PbFree) SBAT54AWT1G SOT323 3,000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications *For additional information on our PbFree strategy and soldering details, please Brochure, BRD8011/D. download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: October, 2015 Rev. 5 BAT54AWT1/DBAT54AW ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) (EACH DIODE) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V V (BR)R (I = 10 A) 30 R Total Capacitance C pF T (V = 1.0 V, f = 1.0 MHz) 7.6 10 R Reverse Leakage I Adc R (V = 25 V) 0.5 2.0 R Forward Voltage V V F (I = 0.1 mA) 0.22 0.24 F (I = 1.0 mA) 0.29 0.32 F (I = 10 mA) 0.35 0.40 F (I = 30 mA) 0.41 0.50 F (I = 100 mA) 0.52 0.80 F Reverse Recovery Time t ns rr (I = I = 10 mAdc, I = 1.0 mAdc, Figure 1) 5.0 F R R(REC) 820 +10 V 2 k 0.1 F I F t t T r p I F 100 H t T 10% 0.1 F rr DUT 90% 50 OUTPUT 50 INPUT i = 1 mA PULSE SAMPLING R(REC) I R GENERATOR OSCILLOSCOPE V R OUTPUT PULSE INPUT SIGNAL (I = I = 10 mA measured F R at i = 1 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2