SBAT54T1G ON Semiconductor

BAT54T1G, SBAT54T1G Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. BAT54T1G, SBAT54T1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage V 30 V (BR)R (I = 10 A) R Total Capacitance C 7.6 10 pF T (V = 1.0 V, f = 1.0 MHz) R Reverse Leakage I 0.5 2.0 Adc R (V = 25 V) R Forward Voltage V 0.22 0.24 Vdc F (I = 0.1 mAdc) F Forward Voltage V 0.41 0.5 Vdc F (I = 30 mAdc) F Forward Voltage V 0.52 0.8 Vdc F (I = 100 mAdc) F Reverse Recovery Time t 5.0 ns rr (I = I = 10 mAdc, I = 1.0 mAdc, Figure 1) F R R(REC) Forward Voltage V 0.29 0.32 Vdc F (I = 1.0 mAdc) F Forward Voltage V 0.35 0.40 Vdc F (I = 10 mAdc) F Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 +10 V 2 k 0.1 F I F t t t r p I F 100 H t t 10% 0.1 F rr DUT 90% 50 Output 50 Input i = 1 mA Pulse Sampling R(REC) I R Generator Oscilloscope V R OUTPUT PULSE INPUT SIGNAL (I = I = 10 mA measured F R at i = 1 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit