ESD5481 ESD Protection Diode MicroPackaged Diodes for ESD Protection The ESD5481 is designed to protect voltage sensitive components from ESD. Excellent clamping capability, low leakage, and fast response time provide best in class protection on designs that are www.onsemi.com exposed to ESD. Because of its small size, it is suited for use in cellular phones, MP3 players, digital cameras and many other portable applications where board space comes at a premium. 12 Specification Features Low Capacitance 15 pF Low Clamping Voltage MARKING Small Body Outline Dimensions: 0.60 mm x 0.30 mm DIAGRAM Low Body Height: 0.3 mm PIN 1 Standoff Voltage: 5.0 V X3DFN2 A M CASE 152AF Low Leakage Response Time is < 1 ns A = Specific Device Code IEC6100042 Level 4 ESD Protection M = Date Code IEC6100044 Level 4 EFT Protection These Devices are PbFree, Halogen Free/BFR Free and are RoHS ORDERING INFORMATION Compliant Device Package Shipping Mechanical Characteristics ESD5481MUT5G X3DFN2 10,000 / MOUNTING POSITION: Any (PbFree) Tape & Reel QUALIFIED MAX REFLOW TEMPERATURE: 260C Device Meets MSL 1 Requirements For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications MAXIMUM RATINGS Brochure, BRD8011/D. Rating Symbol Value Unit IEC 6100042 (ESD) Contact 20 kV Air 20 IEC 6100044 (EFT) 5/50 ns 40 A Total Power Dissipation on FR5 Board P 300 mW D (Note 1) T = 25C A Thermal Resistance, JunctiontoAmbient R 400 C/W JA Junction and Storage Temperature Range T , T 55 to +150 C J stg Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = 1.0 x 0.75 x 0.62 in. See Application Note AND8308/D for further description of survivability specs. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: September, 2017 Rev. 9 ESD5481/DESD5481 ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I PP Symbol Parameter I Maximum Reverse Peak Pulse Current R PP DYN I T V Clamping Voltage I I V V V C PP R C BR RWM V I V V V R V Working Peak Reverse Voltage RWM BR C RWM I T I Maximum Reverse Leakage Current V R R RWM DYN V Breakdown Voltage I BR T I PP I Test Current T R Dynamic Resistance DYN BiDirectional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) A Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage V I/O Pin to I/O Pin 5.0 V RWM Breakdown Voltage V I = 5 A 4.5 10 V BR T Breakdown Voltage V I = 1 mA 5.7 8.0 V BR T Reverse Leakage Current I V = 5.0 V 1.0 A R RWM Clamping Voltage (Note 2) V IEC6100042, 8 kV Contact See Figures 1 and 2 V C Clamping Voltage TLP V 19.7 23 V I = 16 A IEC 6100042 Level 2 equivalent C PP (Note 3) 11 13 I = 16 A (8 kV Contact, 15 kV Air) PP Clamping Voltage 8/20 s V I = 1 A 9.8 12 V PP C Waveform per Figure 10 12.4 15 I = 2 A PP Dynamic Resistance R Pin 1 to Pin 2 0.49 DYN Pin 2 to Pin 1 0.28 Reverse Peak Pulse Current I per IEC 6100045 (8/20 s) Figure 10 2.0 A PP Junction Capacitance C V = 0 V, f = 1 MHz 12 15 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. For test procedure see application note AND8307/D. 3. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2