X-On Electronics has gained recognition as a prominent supplier of SESDONCAN1LT3G ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SESDONCAN1LT3G ESD Suppressors / TVS Diodes are a product manufactured by ON Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

SESDONCAN1LT3G ON Semiconductor

SESDONCAN1LT3G electronic component of ON Semiconductor
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See Product Specifications
Part No.SESDONCAN1LT3G
Manufacturer: ON Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressor TVS 24V Automotive 3-Pin SOT-23 T/R
Datasheet: SESDONCAN1LT3G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10000: USD 0.1245 ea
Line Total: USD 1245

Availability - 0
MOQ: 10000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 10000
Multiples : 10000
10000 : USD 0.1245

0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 10000
Multiples : 10000
10000 : USD 0.1396

0
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ : 1
Multiples : 1
1 : USD 1.3089
10 : USD 0.5892
100 : USD 0.2917
500 : USD 0.2191
1000 : USD 0.1646
2500 : USD 0.1421
10000 : USD 0.1325

0
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 10000
Multiples : 10000
10000 : USD 0.271

   
Manufacturer
Product Category
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Product Depth Mm
Product Length Mm
Suppressor Type
Operating Temperature Min Deg C
Leakage Current
Mounting Style
Operating Temperature Max Deg C
Product Height Mm
Rad Hardened
Configuration
Direction Type
Pin Count
Brand
Cnhts
Hts Code
Mxhts
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Subcategory
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We are delighted to provide the SESDONCAN1LT3G from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SESDONCAN1LT3G and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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ESDONCAN1, SESDONCAN1 CAN/CAN-FD Bus Protector Low Capacitance ESD Protection Diode for CAN/CANFD Bus The S/ESDONCAN1 has been designed to protect the CAN transceiver from ESD and other harmful transient voltage events. This www.onsemi.com device provides bidirectional protection for each data line with a single compact SOT23 package, giving the system designer a low cost option for improving system reliability and meeting stringent SOT23 EMI requirements. DUAL BIDIRECTIONAL VOLTAGE SUPPRESSOR Features 200 W PEAK POWER 200 W Peak Power Dissipation per Line (8 x 20 sec Waveform) Diode Capacitance Matching Low Reverse Leakage Current (< 100 nA) Low Capacitance HighSpeed FlexRay Data Rates SOT23 IEC Compatibility: IEC 6100042 (ESD): Level 4 CASE 318 IEC 6100044 (EFT): 50 A 5/50 ns STYLE 27 IEC 6100045 (Lighting) 3.0 A (8/20 s) ISO 76371, Nonrepetitive EMI Surge Pulse 2, 8.0 A PIN 1 (1 x 50 s) PIN 3 ISO 76373, Repetitive Electrical Fast Transient (EFT) PIN 2 EMI Surge Pulses, 50 A (5 x 50 ns) Flammability Rating UL 94 V0 MARKING DIAGRAM S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 25EM These are PbFree Devices Typical Applications 1 Industrial Smart Distribution Systems (SDS) 25E = Device Code DeviceNet M = Date Code = PbFree Package Automotive (Note: Microdot may be in either location) Controlled Area Network CAN 2.1 / CAN FD Low and High Speed CAN ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: October, 2017 Rev. 2 ESDONCAN1/DESDONCAN1, SESDONCAN1 MAXIMUM RATINGS (T = 25C, unless otherwise specified) J Symbol Rating Value Unit PPK Peak Power Dissipation, 8 x 20 s Double Exponential Waveform (Note 1) 200 W T Operating Junction Temperature Range 55 to 150 C J T Storage Temperature Range 55 to 150 C J T Lead Solder Temperature (10 s) 260 C L ESD Human Body Model (HBM) 8.0 kV Machine Model (MM) 400 V IEC 6100042 Specification (Contact) 23 kV Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current pulse per Figure 1. ELECTRICAL CHARACTERISTICS (T = 25C, unless otherwise specified) J Symbol Parameter Test Conditions Min Typ Max Unit V Reverse Working Voltage (Note 2) 24 V RWM V Breakdown Voltage I = 1 mA (Note 3) 26.2 32 V BR T I Reverse Leakage Current V = 24 V 15 100 nA R RWM V Clamping Voltage I = 1 A (8 x 20 s Waveform) 33.4 36.6 V C PP (Note 4) V Clamping Voltage I = 3 A (8 x 20 s Waveform) 44 50 V C PP (Note 4) I Maximum Peak Pulse Current 8 x 20 s Waveform (Note 4) 3.0 A PP C Capacitance V = 0 V, f = 1 MHz (Line to GND) 10 pF J R C Diode Capacitance Matching V = 0 V, 5 MHz (Note 5) 0.26 2 % R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Surge protection devices are normally selected according to the working peak reverse voltage (V ), which should be equal or greater RWM than the DC or continuous peak operating voltage level. 3. V is measured at pulse test current I . BR T 4. Pulse waveform per Figure 1. 5. C is the percentage difference between C of lines 1 and 2 measured according to the test conditions given in the electrical characteristics J table. ORDERING INFORMATION Device Package Shipping ESDONCAN1LT1G SOT23 3,000 / Tape & Reel (PbFree) SESDONCAN1LT1G* SOT23 3,000 / Tape & Reel (PbFree) ESDONCAN1LT3G SOT23 10,000 / Tape & Reel (PbFree) SESDONCAN1LT3G* SOT23 10,000 / Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AEC Q101 Qualified and PPAP Capable. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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